IS42S16160G-6TLI-TR

The IS42S16160G-6TLI-TR is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with internal bank architecture and pipeline operation. It provides a parallel LVTTL memory interface and is built for systems that require high-speed, fully synchronous volatile memory with programmable burst and latency options.

This device implements internal bank management for hidden row access/precharge and supports auto-refresh and self-refresh modes, making it suitable for designs where sustained high throughput and managed refresh are required.

Key Features

• Core / Memory — 256 Mbit SDRAM organized as 16M × 16 with four internal banks; fully synchronous operation with all signals referenced to the rising clock edge.
• Performance — Supported clock frequencies include 166 MHz for the –6 device; access time from clock is 5.4 ns (–6) and CAS latency is programmable (2 or 3 clocks).
• Burst and Access Control — Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); burst read/write and burst read/single write operations with burst termination by stop or precharge.
• Refresh and Power Management — Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with timing options of 32 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade).
• Interface — LVTTL-compatible interface and parallel memory bus for predictable synchronous operation.
• Power — Single power supply centered at 3.3 V (3.3 V ±0.3 V); product specification lists supply range of 3.0 V to 3.6 V.
• Package & Temperature — 54-pin TSOP-II (0.400", 10.16 mm width) in a space-efficient footprint; operating temperature range of −40°C to +85°C (TA).

Typical Applications

• Embedded system memory — Implement high-speed volatile memory in embedded controllers and processing modules that require synchronous parallel DRAM with programmable burst behavior.
• Buffer and frame memory — Use as temporary storage where low access time (5.4 ns from clock) and burst transfers improve data throughput.
• Networking and communications equipment — Suitable for designs needing predictable synchronous DRAM performance and self-refresh capability for power-managed systems.
• Space-constrained board designs — The 54‑pin TSOP‑II package provides a compact footprint for high-density memory implementations.

Unique Advantages

• Programmable access behavior: Selectable CAS latency and burst length/sequence let designers tune latency and throughput to match system timing and bus access patterns.
• High synchronous throughput: Pipeline architecture and support for 166 MHz operation with 5.4 ns access from clock enable sustained high-rate transfers.
• Robust refresh support: Auto Refresh and Self Refresh modes with defined 8K refresh cycles support reliable data retention across operating conditions.
• Industry-temperature operation: Rated for −40°C to +85°C (TA), covering a wide range of industrial temperature requirements.
• Compact package: 54‑pin TSOP‑II (10.16 mm width) provides a small board footprint for memory-dense designs.
• Single-supply simplicity: Operates from a single 3.3 V supply (3.0–3.6 V range), simplifying power distribution.

Why Choose IS42S16160G-6TLI-TR?

The IS42S16160G-6TLI-TR combines a 256 Mbit SDRAM organization with pipeline, fully synchronous operation and flexible burst/CAS programmability to deliver predictable, high-speed parallel memory behavior. Its supported 166 MHz clock rate, 5.4 ns access timing, and LVTTL interface make it suitable for designs that require deterministic SDRAM performance.

With on-chip refresh management, self-refresh capability, a compact 54‑pin TSOP‑II package, and an operating range down to −40°C, this ISSI device is positioned for board-level memory implementations where space, timing control, and temperature robustness are important.

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