IS42S16160G-7BI-TR

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 177 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160G-7BI-TR – IC DRAM 256MBIT PAR 54TFBGA

The IS42S16160G-7BI-TR is a 256 Mbit volatile SDRAM device from ISSI, organized as 16M × 16 with a parallel memory interface. It is delivered in a 54‑TFBGA (8×8) package and is intended for systems that require on-board DRAM storage operating at standard SDRAM voltages.

Designed for applications that need a compact, parallel SDRAM solution, this device offers defined timing and electrical characteristics for integration into embedded and board-level memory subsystems.

Key Features

  • Memory Type & Organization — 256 Mbit SDRAM organized as 16M × 16, provided in a DRAM memory format with a parallel memory interface.
  • Performance — Rated clock frequency of 143 MHz and an access time of 5.4 ns, providing defined timing for system memory operations.
  • Power — Operates from a 3.0 V to 3.6 V supply range.
  • Package — Supplied in a 54‑TFBGA (8×8) package suitable for compact board-level implementations.
  • Operating Temperature — Specified for operation over a −40°C to 85°C ambient temperature range (TA).
  • Interface — Parallel memory interface for integration with compatible memory controllers and system designs.

Typical Applications

  • Embedded Systems — Provides volatile SDRAM storage for embedded designs that require a 16M × 16 memory organization and standard SDRAM signaling.
  • Industrial Equipment — The −40°C to 85°C operating range and 3.0–3.6 V supply suitability make it appropriate for industrial-temperature environments.
  • Memory Modules and Board-Level Expansion — The 54‑TFBGA (8×8) package and parallel interface support integration into custom memory modules and board-level expansions.

Unique Advantages

  • Defined SDRAM timing: 143 MHz clock rating and 5.4 ns access time provide clear performance parameters for system timing and memory controller design.
  • Compact BGA footprint: 54‑TFBGA (8×8) package reduces PCB area for space-constrained board designs.
  • Wide supply range: 3.0 V to 3.6 V operation accommodates systems using standard 3 V SDRAM power rails.
  • Broad temperature operation: −40°C to 85°C rating enables deployment across a wide set of ambient conditions.
  • Parallel interface: Standard parallel memory interface simplifies integration with compatible controllers and legacy designs.

Why Choose IS42S16160G-7BI-TR?

The IS42S16160G-7BI-TR positions itself as a straightforward 256 Mbit parallel SDRAM option offering clear electrical and timing specifications, a compact 54‑TFBGA package, and an industrial temperature range. It is suited to designers and procurement teams seeking a defined SDRAM building block for embedded, industrial, or board-level memory expansion projects.

With its explicit clock, access time, voltage and temperature specifications, this device supports predictable integration into systems where known SDRAM behavior and compact packaging are required.

To request a quote or discuss availability and pricing for IS42S16160G-7BI-TR, please submit a quote request or contact sales for further assistance.

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