IS42S16160G-7BLI

The IS42S16160G-7BLI is a 256Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface in a 54‑TFBGA (8×8) package. It implements a pipelined SDRAM architecture with fully synchronous operation referenced to the rising edge of the clock.

Targeted at systems requiring high‑speed synchronous DRAM, the device offers programmable burst modes, selectable CAS latencies, and refresh/self‑refresh capability to support performance and power management across commercial and industrial temperature ranges.

Key Features

• Memory Organization  256 Mbit arranged as 16M × 16 with internal banks for row access/precharge operations.
• Performance  Supports clock frequencies up to 143 MHz for the -7 speed grade with access times down to 5.4 ns (from clock) and selectable CAS latency (2 or 3 clocks).
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave) with burst read/write and burst termination support.
• Refresh and Power Management  Auto Refresh (CBR) and Self Refresh supported; refresh cycles specified as 8K per refresh interval with options for commercial/industrial timing.
• Interface  LVTTL-compatible parallel interface with random column address capability every clock cycle.
• Supply and Timing  Single supply range listed as 3.0 V to 3.6 V (datasheet nominal 3.3 V ±0.3 V) and key timing parameters defined for CLK frequencies and CAS latencies.
• Package and Temperature  54‑ball TFBGA (8×8) package; operating temperature range specified as −40°C to +85°C (TA) for industrial grade.

Typical Applications

• High‑throughput buffer memory  Use as synchronous pipeline DRAM for systems that require structured burst transfers and predictable CAS latency.
• Parallel‑interface memory expansion  Integration where a 16‑bit wide parallel SDRAM interface is required for system memory capacity.
• Embedded and industrial systems  Suitable for designs needing operation across −40°C to +85°C with self‑refresh and auto‑refresh capabilities for reliable memory retention.

Unique Advantages

• Flexible burst control: Programmable burst lengths and sequence modes allow tailoring transfers to application access patterns.
• Selectable CAS latency: CAS latency options (2, 3) enable tuning of read timing versus clock frequency for system performance optimization.
• Power and retention features: Self‑refresh and auto‑refresh support help manage power and preserve data in standby modes.
• Industrial temperature range: Specified operation from −40°C to +85°C meets environmental requirements for many industrial applications.
• Compact BGA package: 54‑TFBGA (8×8) package provides a small footprint for space‑constrained PCBs.
• Standard supply range: Operates from 3.0 V to 3.6 V (nominal 3.3 V ±0.3 V) to fit common system power rails.

Why Choose IS42S16160G-7BLI?

The IS42S16160G-7BLI combines a pipelined synchronous DRAM architecture with programmable burst, CAS latency selection, and refresh features to deliver deterministic, high‑speed parallel memory suitable for embedded and industrial designs. Its 16M × 16 organization and 54‑TFBGA footprint provide a compact and wide‑data‑path option for systems requiring 256 Mbit of SDRAM.

With defined timing parameters (up to 143 MHz for the -7 grade), LVTTL interface compatibility, and an operating temperature range to −40°C, the device is positioned for designs that need predictable timing, memory management flexibility, and reliable operation across commercial and industrial environments.

Request a quote or submit an inquiry to obtain pricing and availability for the IS42S16160G-7BLI and support information for your design.