IS42S16160G-7BL

The IS42S16160G-7BL is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface in a 54‑TFBGA (8×8) package. It uses a fully synchronous, pipelined architecture with internal bank management to support high-speed data transfers.

Targeted for commercial-temperature applications, the device operates from 3.0 V to 3.6 V (single 3.3 V ±0.3 V supply), supports LVTTL signaling and a maximum clock frequency of 143 MHz (‑7 speed grade), and provides features for programmable burst sequencing and refresh management.

Key Features

• Memory Organization — 256 Mbit capacity organized as 16M × 16 with four internal banks.
• Performance — Clock frequency up to 143 MHz (‑7); access time from clock of 5.4 ns; programmable CAS latency (2 or 3 clocks).
• Burst and Sequencing — Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations.
• Refresh and Low-Power Modes — Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles (commercial timing documented in datasheet).
• Interface and Signaling — Parallel memory interface with LVTTL-level inputs; all signals referenced to the positive clock edge (fully synchronous).
• Power — Single power supply: 3.3 V ±0.3 V (operating range 3.0 V to 3.6 V).
• Package and Temperature — 54‑TFBGA (8×8) package; specified operating temperature 0°C to +70°C (TA).

Typical Applications

• Commercial embedded systems — On-board parallel SDRAM for consumer and commercial electronics requiring 256 Mbit of synchronous DRAM in a compact BGA package.
• Buffering and temporary storage — Use where synchronous, burst-capable parallel memory is needed for short-term data buffering.
• High-throughput burst operations — Suitable for designs leveraging programmable burst lengths and CAS latency to tune read/write performance.

Unique Advantages

• Compact BGA footprint: 54‑TFBGA (8×8) package reduces PCB area for dense board designs.
• Flexible performance tuning: Programmable CAS latency and burst length/sequence allow designers to match timing and throughput to system needs.
• Synchronous pipeline architecture: All signals referenced to clock edge and internal bank management enable efficient high-speed transfers.
• Single-supply operation: 3.3 V ±0.3 V simplifies power rail requirements in systems using standard 3.3 V domains.
• Refresh and low-power modes: Auto Refresh and Self Refresh support helps maintain data integrity while managing power.

Why Choose IS42S16160G-7BL?

The IS42S16160G-7BL provides a straightforward 256 Mbit synchronous DRAM solution for commercial-temperature designs that require a parallel SDRAM with programmable timing and burst capabilities. Its 54‑TFBGA package and single 3.3 V supply make it a practical option for compact boards where standard LVTTL signaling and burst performance are needed.

This device is suited to designers seeking a verified, synchronous DRAM building block that balances density, timing flexibility, and refresh capabilities for temporary data storage and buffering in commercial electronic systems.

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