IS42S16160G-6TLI

The IS42S16160G-6TLI is a 256Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface. It implements a pipelined, fully synchronous architecture with internal banks to support high-speed data transfer and burst operations.

Targeted at board-level memory subsystems and industrial-temperature designs, the device delivers 166 MHz clock operation (‑6 speed grade), 5.4 ns access time, and single-supply 3.0–3.6 V operation in a compact 54-pin TSOP-II package.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipeline architecture and internal bank structure for hiding row access/precharge; all signals referenced to the rising edge of the clock.
• Memory Organization  256 Mbit capacity organized as 16M × 16 with 4 internal banks.
• Performance  Clock frequency up to 166 MHz for the -6 option with access time of 5.4 ns (from clock) and programmable CAS latency of 2 or 3 clocks.
• Burst & Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh & Retention  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with options for 32 ms (A2 grade) or 64 ms (commercial/industrial and A1 grade) refresh intervals as specified.
• Interface & Logic  LVTTL-compatible control signals and random column addressing every clock cycle enable straightforward board integration with synchronous memory controllers.
• Power & Supply  Single power supply operation: 3.0 V to 3.6 V.
• Package & Temperature  54-pin TSOP-II (0.400", 10.16 mm width) package; operating temperature range specified as −40 °C to +85 °C (TA).

Typical Applications

• Embedded system memory  Board-level DRAM for processors and controllers requiring synchronous burst access and predictable timing.
• High-speed buffering  Temporary data buffering and pipeline staging where synchronous access and internal banking improve throughput.
• Industrial equipment  Memory subsystems in equipment demanding operation across −40 °C to +85 °C with single 3.0–3.6 V supply compatibility.

Unique Advantages

• Deterministic synchronous operation  All signals referenced to the positive clock edge enable predictable timing for synchronous memory controllers.
• Flexible burst control  Programmable burst lengths and sequences simplify tuning for different access patterns and system throughput needs.
• Compact board footprint  54-pin TSOP-II package (0.400", 10.16 mm) offers a space-efficient footprint for high-density designs.
• Industrial temperature support  Specified operation from −40 °C to +85 °C to support a broad range of environmental conditions.
• Single-supply simplicity  3.0–3.6 V single-supply operation simplifies power-rail design and sequencing.
• Fast access and clocking  166 MHz clock capability with 5.4 ns access time (‑6 grade) supports systems requiring low-latency memory access.

Why Choose IS42S16160G-6TLI?

The IS42S16160G-6TLI combines synchronous, pipelined SDRAM architecture with flexible burst control and selectable CAS latency to deliver reliable, predictable memory performance at 166 MHz operation. Its 16M × 16 organization and 256 Mbit capacity make it suitable for board-level memory subsystems that require compact packaging and industrial-temperature operation.

This device is appropriate for designers needing a single-supply, fully synchronous DRAM with internal banking, auto/self-refresh capability, and LVTTL interface compatibility—providing a practical balance of performance, integration, and operational robustness for embedded and industrial applications.

Request a quote or submit an inquiry for IS42S16160G-6TLI to obtain pricing and availability information for your project.