IS42S16160G-6TL-TR

The IS42S16160G-6TL-TR is a 256Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture with internal bank management to support high-speed data transfer for board-level memory subsystems.

Designed for commercial-temperature applications, the device operates from a 3.3V ±0.3V supply and is supplied in a 54-pin TSOP-II package. Typical use cases include systems requiring a compact 256Mbit SDRAM footprint with programmable burst and latency options.

Key Features

• Memory Architecture  256Mbit SDRAM organized as 16M × 16 with internal bank architecture (4 banks) to improve access efficiency and hide row access/precharge latency.
• Performance  Supports clock frequencies including 166 MHz (part -6 timing), with CAS latency options (2 or 3 clocks) and an access time from clock of approximately 5.4 ns.
• Programmable Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (sequential or interleave) for flexible memory transfer patterns.
• Refresh and Power Management  Supports Auto Refresh and Self Refresh. Refresh cycle counts include 8K/64ms for commercial/industrial operation and 8K/32ms for the A2 option.
• Interface and Signaling  Fully synchronous operation with LVTTL-compatible interface; all signals referenced to the rising edge of the clock for deterministic timing.
• Single-Supply Operation  Single 3.3V ±0.3V power supply simplifies system power design.
• Package and Temperature  Available in a 54-pin TSOP-II (0.400", 10.16mm width) package and specified for commercial temperature range 0°C to +70°C.

Typical Applications

• Board-level Memory Subsystems  Use as a compact 256Mbit SDRAM option where a 54-pin TSOP-II footprint and parallel SDRAM interface are required.
• Embedded Systems (Commercial Temperature)  Suitable for designs operating within 0°C to +70°C that need synchronous DRAM with programmable burst and latency control.
• Memory Expansion on Consumer and Industrial PCBs  Provides parallel SDRAM capacity and timing flexibility for systems requiring deterministic, clock-referenced memory access.

Unique Advantages

• Synchronous SDRAM with Banked Architecture: Internal bank structure and fully synchronous operation enable pipelined access and improved throughput for sequential and random accesses.
• Configurable Performance: Multiple clock-frequency options and selectable CAS latency (2 or 3) plus programmable burst lengths let designers balance latency and throughput.
• Standard TSOP-II Footprint: 54-pin TSOP-II package simplifies board integration where space and standard package form-factor are constraints.
• Single 3.3V Supply: Operates from a single 3.3V ±0.3V supply to align with common system rails and simplify power distribution.
• Flexible Refresh Modes: Supports Auto Refresh and Self Refresh with defined refresh counts (8K/64ms commercial/industrial; 8K/32ms for A2 option) to meet system retention requirements.
• LVTTL-Compatible Interface: Clock-referenced LVTTL signaling ensures predictable timing for synchronous system designs.

Why Choose IS42S16160G-6TL-TR?

The IS42S16160G-6TL-TR provides a compact, programmable 256Mbit SDRAM solution targeted at designs that require a clocked, parallel memory interface in a 54-pin TSOP-II package. Its combination of banked architecture, selectable CAS latency, programmable burst modes, and single-supply 3.3V operation makes it suitable for commercial-temperature systems that need deterministic, high-speed memory behavior.

Backed by Integrated Silicon Solution Inc., this device is appropriate for engineers and procurement teams specifying board-level SDRAM capacity where predictable timing, package compatibility, and configurable transfer modes are required.

Request a quote or submit an RFQ for the IS42S16160G-6TL-TR to obtain availability and lead-time information for your design evaluation and sourcing needs.