IS42S16160G-6BLI

The IS42S16160G-6BLI is a 256 Mbit synchronous DRAM device organized as 16M × 16 with a parallel memory interface and pipeline architecture. It provides fully synchronous operation referenced to the rising edge of the system clock and is designed for high-speed data transfer in systems requiring compact, board-level DRAM.

Key design attributes include a 166 MHz clock option (–6 speed grade), programmable burst and CAS latency options, single 3.3 V power supply range, and a compact 54-ball TFBGA (8×8) package with an operating temperature range from −40°C to +85°C.

Key Features

• Memory Organization: 256 Mbit SDRAM organized as 16M × 16 with internal bank architecture to support hidden row access and precharge.
• Performance: –6 speed grade provides a 166 MHz clock frequency and 5.4 ns access time from clock; programmable CAS latency options of 2 or 3 clocks.
• Burst and Sequencing: Programmable burst length (1, 2, 4, 8, full page) and selectable sequential or interleave burst sequence; supports burst read/write and burst read/single write operations.
• Refresh and Self-Refresh: Auto Refresh (CBR) and Self Refresh supported with 8K refresh cycles; refresh interval options documented for A2 and commercial/industrial/A1 grades.
• Interface and Signal Levels: Fully synchronous LVTTL interface with all signals referenced to the positive clock edge; random column address every clock cycle.
• Power: Single supply operation at 3.3 V ±0.3 V (documented supply range 3.0 V – 3.6 V).
• Package and Temperature: 54-TFBGA (8×8) package; operating temperature range −40°C to +85°C (TA).

Typical Applications

• System memory buffers: Use as board-level DRAM for designs requiring 256 Mbit synchronous memory with parallel access and pipeline timing.
• High-speed data transfer interfaces: Suitable for designs leveraging a synchronous LVTTL interface at up to 166 MHz clock rate for fast burst transfers.
• Embedded and industrial modules: Applicable where operation across −40°C to +85°C and single-supply 3.3 V operation are required.

Unique Advantages

• Programmable latency and burst control: CAS latency selectable (2 or 3) and multiple burst length/sequence options enable tuning for system timing and throughput requirements.
• High-speed synchronous operation: –6 grade provides 166 MHz operation with 5.4 ns access time from clock for responsive memory cycles.
• Compact BGA footprint: 54-ball TFBGA (8×8) package conserves board space while supporting high-density memory integration.
• Robust refresh management: Supports Auto Refresh and Self Refresh with documented 8K refresh cycles to maintain data integrity across operating conditions.
• Standard 3.3 V supply: Single-supply operation (3.0 V–3.6 V) simplifies power-rail design in systems using 3.3 V domains.

Why Choose IS42S16160G-6BLI?

The IS42S16160G-6BLI combines 256 Mbit synchronous DRAM capacity with a 16M × 16 organization, programmable timing features, and a compact 54-TFBGA package—making it well suited for designs that require predictable, high-speed parallel memory behavior. Its support for programmable burst lengths, CAS latency options, and both auto- and self-refresh modes provides flexibility to match system timing and power needs.

This device is appropriate for engineers and procurement teams specifying board-level SDRAM where 166 MHz operation, 3.3 V single-supply compatibility, and industrial temperature operation (−40°C to +85°C) are required. The documented timing and refresh options facilitate reliable integration into systems that demand synchronous, burst-capable DRAM.

If you would like a quote or additional purchasing information for the IS42S16160G-6BLI, submit a request and our team will provide pricing and availability details.