IS42S16160G-5BL

The IS42S16160G-5BL is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with internal banks and a parallel memory interface. It uses a pipelined architecture and fully synchronous timing referenced to the rising edge of the clock to support high-speed data transfer.

Targeted for systems that require a parallel SDRAM solution in a compact 54-ball TFBGA package, the device provides programmable burst control, selectable CAS latency, and standard refresh/self-refresh capabilities while operating from a single 3.0 V–3.6 V supply (3.3 V ±0.3 V per datasheet).

Key Features

• Memory Core 256 Mbit SDRAM organized as 16M × 16 (4M × 16 × 4 banks) for parallel data storage and banked access.
• Clock and Timing Supports clock frequencies up to 200 MHz with programmable CAS latency (2 or 3 clocks) and an access time from clock as low as 5 ns (per datasheet timing table).
• Burst and Sequencing Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh and Retention Auto refresh and self-refresh supported; 8K refresh cycles with options of 32 ms (A2 grade) or 64 ms (commercial/A1 grade) as specified in the datasheet.
• Interface LVTTL-compatible interface signals with fully synchronous operation referencing a positive clock edge.
• Power Single power supply operation; specified voltage range 3.0 V–3.6 V (datasheet: 3.3 V ±0.3 V).
• Package and Temperature 54-ball TFBGA (8 × 8) package; commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• High-speed buffer memory Use where parallel SDRAM buffering and burst transfers are required to support sustained data throughput.
• Embedded system memory Suitable for designs that need a compact 54-ball BGA SDRAM device with banked access and programmable burst control.
• Legacy parallel SDRAM interfaces Integrates with systems using a parallel SDRAM interface and LVTTL-compatible signaling.

Unique Advantages

• Banked, pipelined architecture Internal bank structure hides row access/precharge and supports pipeline operation for efficient high-speed transfers.
• Flexible burst control Programmable burst lengths and sequences enable optimized data block transfers for a range of access patterns.
• Selectable CAS latency CAS latency options (2 or 3 clocks) allow designers to trade timing for frequency per system requirements.
• Standard refresh modes Auto and self-refresh with 8K refresh cycles (32 ms or 64 ms options) provide standard DRAM retention management.
• Compact BGA footprint 54-ball TFBGA (8×8) package reduces PCB area while providing the necessary ballout for parallel SDRAM connectivity.

Why Choose IS42S16160G-5BL?

The IS42S16160G-5BL positions itself as a compact, banked 256 Mbit SDRAM solution for designs requiring a parallel memory interface and programmable burst behavior. Its support for up to 200 MHz clocking, selectable CAS latency, and standard refresh/self-refresh modes make it suited to systems that need predictable synchronous DRAM performance within a 54-ball TFBGA footprint.

This device is appropriate for engineers specifying parallel SDRAM for embedded or legacy systems where a single 3.0 V–3.6 V supply, commercial temperature range (0°C to +70°C), and LVTTL signaling align with system design constraints. The IS42S16160G-5BL’s feature set delivers scalable memory capacity and timing flexibility while maintaining a small board-level footprint.

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