IS42S16160D-7TLI-TR

The IS42S16160D-7TLI-TR is a 256‑Mbit synchronous DRAM device organized as 16M × 16 with internal bank architecture and pipeline operation. It is a parallel‑interface SDRAM designed for high‑speed, clocked memory applications that require programmable burst operation and standard SDRAM control features.

This device targets systems that need a 256‑Mbit volatile memory solution with 143 MHz clock operation (‑7 speed grade), programmable CAS latency, and single‑supply operation in a compact 54‑pin TSOP‑II package. It supports features such as auto‑refresh and self‑refresh for dynamic memory maintenance across operating conditions.

Key Features

• Memory Core — 256 Mbit SDRAM organized as 16M × 16 with internal banks for hidden row access and precharge.
• Performance — Designed for 143 MHz clock operation at the ‑7 speed grade with an access time of 5.4 ns (CAS latency = 3); programmable CAS latency of 2 or 3 clocks.
• Burst and Sequencing — Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); burst read/write and burst read/single write supported with burst termination options.
• Refresh and Retention — Auto refresh (CBR) and self‑refresh supported; 8K refresh cycles with selectable refresh intervals per grade (commercial/industrial A1: 64 ms; A2: 16 ms as defined in datasheet).
• Interface — Fully synchronous operation with all inputs/outputs referenced to the rising edge of the clock and LVTTL‑compatible control signals.
• Power — Single power supply operation at 3.3 V ±0.3 V (3.0–3.6 V supply range specified).
• Package & Temperature — Available in a 54‑pin TSOP‑II (0.400", 10.16 mm width) package; operating temperature range specified as −40 °C to +85 °C (TA) for the industrial grade option.

Unique Advantages

• Synchronous pipeline architecture: All signals referenced to the rising clock edge enable predictable timing and system‑level synchronization.
• Flexible burst operation: Programmable burst lengths and sequences let designers optimize throughput and latency for burst‑oriented access patterns.
• Built‑in refresh modes: Auto‑refresh and self‑refresh capabilities reduce external refresh management complexity and support dynamic retention requirements.
• Wide supply tolerance: 3.3 V ±0.3 V single‑supply operation accommodates typical 3.3 V system rails.
• Industrial temperature support: Specified operation down to −40 °C and up to +85 °C for reliable operation across a range of embedded environments.
• Compact footprint: 54‑pin TSOP‑II package provides a small form factor for board designs with space constraints.

Why Choose IS42S16160D-7TLI-TR?

The IS42S16160D-7TLI-TR provides a fully synchronous 256‑Mbit DRAM solution with programmable latency and burst features for systems that require predictable, clocked memory behavior. Its pipeline architecture, internal bank management, and refresh modes simplify system memory control while delivering the timing performance associated with the ‑7 speed grade.

This device is suited to designs that need a compact 54‑TSOP‑II packaged SDRAM operating from a standard 3.3 V supply and capable of industrial temperature ranges. It offers a clear specification set for designers who require defined timing, refresh, and burst options in a 256‑Mbit parallel SDRAM.

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