IS42S16160G-6BL

The IS42S16160G-6BL is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface in a 54-ball TFBGA (8×8) package. It uses a pipelined, fully synchronous architecture with signals referenced to the rising edge of the clock to support high-speed data transfer in commercial-temperature systems.

Designed for applications requiring a compact, 3.3 V single-supply SDRAM device, this part provides programmable burst and latency options plus refresh and self-refresh capabilities to support common system memory buffering and high-throughput data paths.

Key Features

• Memory Core  256 Mbit SDRAM organized as 16M × 16 with internal bank architecture for row access and precharge management.
• Synchronous Operation & Timing  Fully synchronous operation with all I/O referenced to the positive clock edge; typical clock frequency supported at 166 MHz and access time of 5.4 ns (–6 speed grade).
• Programmable Burst & CAS  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave). CAS latency selectable (2 or 3 clocks).
• Refresh & Power Management  Auto-refresh and self-refresh support with standard 8K refresh cycles (commercial: 8K/64 ms) to maintain data integrity.
• Interface & Signaling  Parallel memory interface with LVTTL signaling for control and data paths.
• Power  Single power supply: nominal 3.3 V (range 3.0 V to 3.6 V).
• Package & Temperature  54-ball TFBGA (8×8) package; specified operating temperature range 0°C to 70°C (TA) for the commercial variant.

Typical Applications

• Embedded systems requiring synchronous DRAM  Use as a 256 Mbit parallel SDRAM device for system memory and buffering where a compact 54-ball BGA package is required.
• High-speed data buffering  Pipeline architecture and 166 MHz clock support high-throughput read/write bursts for transient data storage and buffering tasks.
• Board-level memory expansion  16M × 16 organization and programmable burst modes enable flexible integration as a parallel DRAM resource on complex PCBs.

Unique Advantages

• Compact BGA footprint: The 54-ball TFBGA (8×8) package reduces board area compared with larger DIP/TSOP options while retaining full SDRAM capability.
• Flexible performance scaling: Programmable CAS latency and burst length/sequence let designers tune throughput and latency to match system timing requirements.
• Synchronous pipeline architecture: All signals referenced to the positive clock edge and internal bank management help support continuous high-speed transfers.
• Standard single-supply operation: 3.3 V nominal supply (3.0–3.6 V) simplifies power-rail design in systems already using 3.3 V logic.
• Refresh and low-power readiness: Auto-refresh and self-refresh modes with 8K refresh cycles preserve data with minimal host intervention.
• Deterministic timing: Documented access times (5.4 ns at the –6 speed grade) and clock-frequency support provide predictable memory performance.

Why Choose IS42S16160G-6BL?

The IS42S16160G-6BL positions itself as a compact, commercially rated 256 Mbit SDRAM solution for designs that need synchronous, parallel DRAM with programmable timing and burst features. Its 16M × 16 organization, LVTTL interface, and support for auto/self-refresh offer a balance of performance and system-level flexibility.

This device is suited to designers and procurement teams specifying board-level SDRAM for embedded systems, high-speed buffering, and memory expansion where a 54-ball TFBGA package and 0°C to 70°C operating range match system requirements. The combination of programmable latency, burst modes, and documented timing simplifies integration and validation in deterministic memory subsystems.

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