IS42S16160G-6BL-TR

The IS42S16160G-6BL-TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface and pipeline architecture for high-speed, clocked data transfers. Designed for systems that require a single-supply 3.3 V (3.0 V–3.6 V) SDRAM device in a compact 54-ball TFBGA (8×8) package, the device supports programmable burst modes and low-latency access.

Key value propositions include synchronous, burst-capable operation with programmable CAS latency, auto/self-refresh support for data integrity during idle periods, and a commercial operating temperature range of 0°C to 70°C suitable for many board-level memory applications.

Key Features

• Memory Core  256 Mbit organization as 16M × 16 with internal bank architecture to support pipelined row access and precharge.
• Synchronous SDRAM  Fully synchronous operation with all signals referenced to the rising clock edge and LVTTL compatible interface.
• Clock & Timing  Supports clock frequencies including 166 MHz (–6 speed grade) with an access time from clock of 5.4 ns and selectable CAS latency (2 or 3 clocks).
• Burst & Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (Sequential/Interleave) for efficient block transfers.
• Refresh & Retention  Auto-refresh and self-refresh supported; commercial-grade refresh requirement is 8K cycles every 64 ms.
• Power  Single power supply operation: 3.3 V ± 0.3 V (specified 3.0 V to 3.6 V).
• Package  54-ball TFBGA (8×8) package case for compact board footprint and BGA mounting.
• Temperature Range  Commercial operating temperature range: 0°C to 70°C (TA).

Typical Applications

• Parallel SDRAM system memory  Used as main or auxiliary DRAM in systems that implement a parallel SDRAM interface and require organized 16M×16 memory banks.
• High-speed data buffering  Supports burst read/write and burst read/single write operations for buffering streaming or bursty data flows.
• Pipelined memory architectures  Pipeline-friendly synchronous operation and internal bank structure enable efficient overlapping of row access and precharge operations.

Unique Advantages

• Deterministic synchronous timing  All signals referenced to the clock rising edge and selectable CAS latency provide predictable timing for system designers.
• Flexible burst control  Programmable burst lengths and sequences allow designers to optimize transfers for sequential or interleaved data patterns.
• Compact BGA footprint  54-ball TFBGA (8×8) package minimizes board area while providing BGA-level connectivity.
• Single-supply simplicity  3.3 V single-supply operation (3.0 V–3.6 V) simplifies power rail requirements in many designs.
• Built-in refresh support  Auto-refresh and self-refresh modes maintain data integrity during idle periods consistent with commercial refresh timing.

Why Choose IS42S16160G-6BL-TR?

The IS42S16160G-6BL-TR provides a synchronous, burst-capable 256 Mbit DRAM solution with 16M × 16 organization, suitable for board-level memory implementations that demand predictable timing and efficient block transfers. With programmable CAS latency, selectable burst modes, and internal bank architecture, it supports pipeline-style access patterns and high-throughput buffering.

Packaged in a compact 54-ball TFBGA and specified for 3.3 V single-supply operation and commercial temperature range, this ISSI device is appropriate for designs that require a compact parallel SDRAM with detailed vendor documentation and standard SDRAM feature set.

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