IS42S16160G-5BL-TR

The IS42S16160G-5BL-TR is a 256Mbit synchronous DRAM organized as 16M × 16 with internal bank architecture and pipeline operation. It provides fully synchronous, high-speed memory access referenced to the rising clock edge and is intended for systems that require a parallel SDRAM memory component with programmable burst and latency settings.

Designed for commercial temperature applications, this device delivers selectable CAS latency, programmable burst lengths and sequences, and standard LVTTL signaling to support high-throughput memory operations in embedded and system-level designs.

Key Features

• Memory Core  256 Mbit SDRAM organized as 16M × 16 with internal bank architecture to optimize row access and precharge hiding.
• Performance  Clock frequency up to 200 MHz and access time down to 5 ns (CAS latency = 3) for high-speed data transfer.
• Programmable Burst & Latency  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave); selectable CAS latency of 2 or 3 clocks.
• Refresh and Power Management  Supports Auto Refresh and Self Refresh modes with 8K refresh cycles (commercial and A1: 64 ms; A2: 32 ms) to maintain data integrity.
• Interface  LVTTL-compatible interface with parallel memory access and random column addressing every clock cycle.
• Power  Single power supply operation: 3.3 V ±0.3 V (specified as 3.0 V to 3.6 V).
• Package & Temperature  Available in a 54-ball TFBGA (8 × 8) package; rated for commercial operating temperature range 0°C to +70°C (TA).
• System Features  Fully synchronous operation with all signals referenced to the positive clock edge, burst termination options, and programmable operations for read/write efficiency.

Typical Applications

• High-throughput system memory  Use as parallel SDRAM for designs requiring synchronous, burst-capable memory at 256 Mbit density.
• Data buffering  Suitable for buffer memory roles where programmable burst lengths and low access time improve throughput.
• Embedded memory subsystems  Fits embedded designs needing LVTTL interface and a compact 54-ball TFBGA package within a commercial temperature range.

Unique Advantages

• High-speed synchronous operation: Up to 200 MHz clock frequency and 5 ns access time enable fast, predictable memory timing.
• Flexible performance tuning: Programmable CAS latency and burst settings let designers balance latency and throughput to match system requirements.
• Compact BGA package: 54-ball TFBGA (8×8) provides a small footprint for space-constrained boards while supporting parallel SDRAM connections.
• Standard power domain: Single 3.3 V supply range (3.0–3.6 V) simplifies power rail design in systems using common 3.3 V logic.
• Robust refresh options: Auto Refresh and Self Refresh support with documented refresh-cycle timing options to maintain data integrity over standard commercial profiles.

Why Choose IS42S16160G-5BL-TR?

The IS42S16160G-5BL-TR offers a 256Mbit synchronous DRAM solution that combines pipeline architecture, flexible burst/latency programming, and a compact 54-ball TFBGA package. Its documented timing parameters, LVTTL interface, and single-supply operation make it suitable for designs that require predictable, high-speed parallel memory performance within a commercial temperature range.

This device is well suited for engineers specifying a 16M × 16 SDRAM component where controlled access timing, programmable burst behavior, and standard power/interface requirements are required for system memory and buffering tasks.

If you require a quote or additional procurement information for IS42S16160G-5BL-TR, please submit a request to receive pricing and availability details from our sales team.