IS42S16160D-7TL-TR

The IS42S16160D-7TL-TR is a 256-Mbit synchronous DRAM from Integrated Silicon Solution Inc (ISSI), organized as 16M × 16 with 4 internal banks. It uses a fully synchronous, pipelined architecture and a parallel memory interface to support high-speed data transfer in systems requiring fast working memory or buffering.

Designed for 3.3V operation (3.0–3.6V), the device is offered in a 54-pin TSOP-II package and is specified for commercial temperature operation (0°C to 70°C). The -7 timing grade provides a clock frequency option up to 143 MHz with a typical access time of 5.4 ns (CAS latency = 3).

Key Features

• Memory Core  256 Mbit SDRAM organized as 16M × 16 with 4 internal banks, providing parallel access and banked operations for improved throughput.
• Performance & Timing  Clock frequency up to 143 MHz (‑7 grade) and access time from clock of 5.4 ns at CAS latency = 3 enable high-speed synchronous transfers.
• Power  Single power supply: 3.3V ± 0.3V (3.0–3.6V) for standard 3.3V system compatibility.
• Interface  LVTTL-compatible parallel interface with fully synchronous inputs and outputs referenced to the rising clock edge.
• Burst and Access Modes  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave) with burst read/write and burst read/single write capability.
• Refresh & Self-Refresh  Supports Auto Refresh (CBR) and Self Refresh. Typical refresh count is 8K cycles with timing options shown for commercial and A2 grades in the datasheet.
• Programmability  Programmable CAS latency (2 or 3 clocks) and support for burst termination via burst stop and precharge commands.
• Package & Thermal  54-pin TSOP-II package (0.400", 10.16 mm width) specified for commercial ambient operation from 0°C to 70°C.

Typical Applications

• High-speed buffering and working memory  Synchronous, pipelined operation with banked architecture supports fast data throughput for systems that require predictable, clocked memory access.
• Embedded system memory  256 Mbit density and parallel interface make the device suitable for embedded designs needing mid-density SDRAM in a compact TSOP-II footprint.
• Data transfer and temporary storage  Programmable burst lengths and LVTTL interface enable efficient burst read/write patterns for temporary data storage and transfer operations.

Unique Advantages

• Synchronous, pipelined architecture: Enables predictable, clock-referenced I/O and optimized high-speed transfers.
• Flexible burst control: Programmable burst length and sequence let designers tailor throughput and latency to application needs.
• Banked memory organization: 4 internal banks (4M × 16 × 4) help hide row access/precharge cycles and improve effective bandwidth.
• Standard 3.3V supply: Operates at 3.3V ±0.3V (3.0–3.6V), simplifying integration into common 3.3V systems.
• Compact TSOP-II package: 54-pin TSOP-II (10.16 mm width) provides a space-efficient footprint for board-level integration.

Why Choose IS42S16160D-7TL-TR?

The IS42S16160D-7TL-TR delivers a balanced combination of performance and integration for designs that require mid-density synchronous DRAM in a compact package. With programmable CAS latency, burst control, and a banked architecture, it supports a range of access patterns and high-speed transfers while operating from a standard 3.3V supply.

This part is suited for designers and procurement teams seeking a 256 Mbit SDRAM with defined timing grades (‑7), commercial temperature rating, and a TSOP-II footprint for compact board layouts. The device’s refresh, self-refresh, and burst features help maintain data integrity and throughput in typical system scenarios.

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