IS42S16160D-7TL

The IS42S16160D-7TL is a 256‑Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with internal bank architecture and pipeline operation. All input and output signals are referenced to the rising edge of the clock, enabling fully synchronous operation for high‑speed data transfer.

Designed for systems that require parallel SDRAM with programmable burst modes, low access latency and standard 3.3 V supply operation, the device is offered in a compact 54‑pin TSOP‑II package and specified for commercial operation (0°C to +70°C).

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank structure to hide row access and precharge, and all I/O referenced to the positive clock edge.
• Memory Organization & Capacity  256 Mbit total capacity, organized as 16M × 16 with four banks.
• Timing & Performance  Rated for 143 MHz operation for the -7 speed grade; programmable CAS latency of 2 or 3 clocks and access time from clock of 5.4 ns (CL = 3).
• Burst & Access Modes  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave). Supports burst read/write and burst read/single write operations with burst termination commands.
• Power & Interface  Single power supply: 3.3 V ±0.3 V (specified 3.0 V to 3.6 V). LVTTL interface signaling.
• Refresh & Low‑Power States  Auto refresh and self refresh supported; commercial grade refresh requirement is 8K cycles every 64 ms.
• Package  54‑pin TSOP‑II (0.400" / 10.16 mm width) package, suitable for surface mount applications.
• Operating Temperature  Commercial grade: 0°C to +70°C (TA).

Typical Applications

• System Memory — Serves as high‑speed parallel SDRAM for systems requiring 256 Mbit volatile storage with programmable burst and low CAS latency.
• High‑Speed Data Buffers — Used in designs that need pipeline data transfers and internal bank management to reduce effective row access latency.
• Embedded Platforms — Provides main or auxiliary volatile memory for embedded designs operating at commercial temperature ranges and 3.3 V supply.

Unique Advantages

• Proven synchronous pipeline architecture: Internal bank structure and fully synchronous I/O enable predictable, clock‑edge referenced data transfers.
• Flexible performance options: 143 MHz speed grade with selectable CAS latency (2 or 3) and programmable burst lengths lets designers balance throughput and latency.
• Standard 3.3 V supply and LVTTL interface: Simplifies integration into existing 3.3 V platforms with conventional logic signaling.
• Compact TSOP‑II package: 54‑pin surface‑mount footprint (10.16 mm width) conserves board area while providing parallel memory connectivity.
• Power management features: Auto refresh and self refresh support help maintain data integrity during idle periods and reduce refresh overhead.
• Commercial temperature rating: Specified for 0°C to +70°C to match a wide range of general‑purpose electronics.

Why Choose IS42S16160D-7TL?

The IS42S16160D-7TL positions itself as a straightforward 256 Mbit SDRAM solution for designs that require a synchronous, parallel memory interface with programmable burst behavior and selectable CAS latency. Its 16M × 16 organization, internal bank architecture and 143 MHz speed grade offer a balance of throughput and low access latency.

This device is appropriate for engineers building systems that need compact surface‑mount SDRAM in a 54‑pin TSOP‑II package, operating from a standard 3.3 V supply and within commercial temperature limits. Its refresh and self‑refresh capabilities, combined with flexible burst modes, deliver dependable operation for a variety of volatile memory roles.

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