IS42S16160D-7BL

The IS42S16160D-7BL is a 256‑Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. The device uses a fully synchronous, pipelined architecture to support high‑speed data transfers and predictable timing referenced to the rising edge of the clock.

Designed for systems requiring a 256‑Mbit parallel SDRAM with programmable burst operation and selectable CAS latency, the device delivers configurable access timing and standard LVTTL signaling while operating from a single 3.3V ±0.3V supply.

Key Features

• Memory Core & Organization — 256 Mbit SDRAM organized as 16M × 16 with internal bank architecture (4 banks) to improve row access and precharge efficiency.
• Performance & Timing — Clock frequency up to 143 MHz (‑7 speed grade) with access time down to 5.4 ns and programmable CAS latency (2 or 3 clocks) for timing flexibility.
• Burst & Access Modes — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh and Power Management — Auto refresh (CBR) and self refresh supported; 8K refresh cycles per refresh interval as specified by device grade.
• Interface & Signaling — Fully synchronous operation with all I/Os referenced to the positive clock edge and LVTTL compatible interface; random column address capability every clock cycle.
• Supply & Operating Range — Single power supply: 3.3V ±0.3V (3.0V to 3.6V supply window). Operating ambient temperature range: 0°C to +70°C (TA).
• Package — 54‑TFBGA (54‑ball BGA, 8 × 13) package optimized for board‑level mounting and compact system designs.

Typical Applications

• Parallel memory subsystems — Used where a 256‑Mbit parallel SDRAM with 16M × 16 organization is required for system memory or external DRAM expansion.
• High‑speed buffering — Suited for designs that require synchronous, pipelined data transfers referenced to a positive clock edge at up to 143 MHz.
• Configurable burst operations — Ideal for systems benefiting from programmable burst lengths and sequences to match different throughput and latency requirements.

Unique Advantages

• Programmable timing flexibility: Selectable CAS latency (2 or 3 clocks) and programmable burst lengths let designers fine‑tune latency and throughput to their system needs.
• Synchronous, pipelined architecture: All signals referenced to the rising clock edge enable predictable timing and efficient high‑speed data transfer.
• Single‑supply simplicity: Operates from a single 3.3V ±0.3V supply (3.0–3.6V), simplifying power rail requirements for most commercial system designs.
• Compact BGA package: 54‑TFBGA (8 × 13) package provides a small footprint for space‑constrained PCBs while supporting a parallel SDRAM interface.
• Refresh and low‑power modes: Support for auto refresh and self refresh provides controlled data retention and power management options.

Why Choose IS42S16160D-7BL?

The IS42S16160D-7BL combines a 16M × 16 memory organization, fully synchronous pipelined operation, and programmable burst and timing options to offer a flexible 256‑Mbit SDRAM solution for commercial ambient temperature systems. Its support for LVTTL signaling, single‑supply operation, and compact 54‑TFBGA package make it suitable for designs that require predictable synchronous memory behavior and a small board footprint.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM where configurable latency, burst modes, and standard refresh functionality are required. The combination of performance parameters and package density supports scalable designs that rely on established SDRAM operation and timing control.

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