IS42S16160D-7B

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 195 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time6 Weeks
Datasheet

Specifications & Environmental

Device Package54-TW-BGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160D-7B – IC DRAM 256MBIT PAR 54TFBGA

The IS42S16160D-7B is a 256‑Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface and pipeline architecture. It is a fully synchronous device with all signals referenced to the rising edge of the clock and supports high‑speed data transfer modes suited for systems requiring low‑latency volatile memory.

Designed for commercial temperature operation (0°C to +70°C) and supplied from a single 3.3V power rail (3.3V ±0.3V, 3.0V–3.6V), this device delivers programmable timing and burst options to fit a range of synchronous memory applications.

Key Features

  • Memory Core 256 Mbit SDRAM organized as 16M × 16 with internal bank architecture (4 banks) to improve access efficiency.
  • Performance Clock frequency up to 143 MHz (‑7 timing), with CAS latency programmable to 2 or 3 clocks and an access time of 5.4 ns at CAS‑3.
  • Interface & Timing Fully synchronous operation with LVTTL signaling; supports programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave).
  • Refresh & Reliability Auto Refresh (CBR) and Self Refresh supported; refresh options include 8K cycles per 64 ms (commercial/A1) or 8K cycles per 16 ms (A2 grade) as specified.
  • Power Single power supply operation at 3.3V ±0.3V (3.0V–3.6V) for simplified power distribution.
  • Package & Temperature Compact 54‑ball TFBGA package (54‑TW‑BGA, 8×13) in a commercial operating range of 0°C to +70°C (TA).
  • Burst & Command Features Supports burst read/write and burst read/single write operations, with burst termination via burst stop and precharge commands.

Unique Advantages

  • Deterministic synchronous operation: Fully synchronous design with clock‑edge referenced signals simplifies timing integration into synchronous systems.
  • Configurable latency and burst behavior: Programmable CAS latency, burst lengths and sequences allow tuning for latency or throughput depending on system needs.
  • Compact BGA footprint: 54‑ball TFBGA package (8×13) enables high memory density in space‑constrained board designs.
  • Single‑rail power: 3.3V single power supply reduces power‑rail complexity and eases system power management.
  • Robust refresh options: Auto and self refresh modes with selectable refresh timing support reliable data retention across operating modes.

Why Choose IS42S16160D-7B?

The IS42S16160D-7B positions itself as a high‑performance 256‑Mbit SDRAM option offering synchronous, low‑latency operation with flexible burst and timing configurations. Its 16M × 16 organization, programmable CAS latency, and 143 MHz clock rating make it suitable for designs that require predictable, clock‑aligned memory behavior and compact board implementation.

This device is appropriate for designers and procurement teams seeking a commercially rated SDRAM in a small BGA package with straightforward single‑supply power requirements and selectable refresh/operational modes for reliable volatile memory functions.

If you need a quote or further procurement information for IS42S16160D-7B, request a quote or submit an inquiry and our team will respond with pricing and availability details.

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