IS42S16160D-75ETLI-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,189 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.5 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160D-75ETLI-TR – IC DRAM 256MBIT PAR 54TSOP II

The IS42S16160D-75ETLI-TR is a 256Mbit synchronous DRAM (SDRAM) device from ISSI organized as 16M × 16. It implements a pipeline architecture and fully synchronous operation with all signals referenced to the rising edge of the clock, providing a high-speed parallel memory option for designs requiring deterministic clocked access.

Targeted use cases include systems that need fast, burst-capable parallel memory with features such as programmable burst length, programmable CAS latency, internal bank management, and self-refresh. Key value propositions include measured access performance (5.5 ns access time at the -75E grade), support for 133 MHz clocking, and a compact 54-pin TSOP-II package with industrial temperature support.

Key Features

  • Memory Core
 The device provides 256 Mbit SDRAM capacity organized as 16M × 16 with internal bank architecture for hidden row access/precharge.
  • Performance
 Clock frequency support up to 133 MHz for the -75E grade and an access time of 5.5 ns (CL=2, -75E), enabling high-speed, deterministic read/write timing.
  • Programmable Burst & Latency
 Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave), with programmable CAS latency options (2 or 3 clocks) to match system timing requirements.
  • Refresh & Self-Refresh
 Auto-refresh and self-refresh support with 8K refresh cycles (timing options per grade), allowing retention during low-power states.
  • Interface
 LVTTL-compatible parallel interface designed for fully synchronous operation referenced to the positive clock edge.
  • Power
 Single-supply operation within 3.0 V to 3.6 V (typical 3.3 V ±0.3 V) to match common system power rails.
  • Package & Temperature
 54-pin TSOP-II package (0.400", 10.16 mm width) with an operating temperature range of -40 °C to +85 °C (TA).

Typical Applications

  • High‑speed buffer memory — Use as parallel SDRAM buffering for designs that require pipeline-style, clocked data transfers and burst operations.
  • Embedded systems — Local system memory for embedded designs leveraging the device's synchronous LVTTL interface, programmable latency and burst control.
  • Industrial equipment — Memory for industrial applications that require operation across a wide temperature range (−40 °C to +85 °C).

Unique Advantages

  • Deterministic synchronous operation: Fully synchronous inputs and outputs referenced to the rising clock edge simplify timing and integration into clocked memory subsystems.
  • High-speed access: -75E grade access time of 5.5 ns (CL=2) and support for 133 MHz clocking enable fast read/write cycles and efficient burst transfers.
  • Flexible burst and latency control: Programmable burst length and CAS latency let designers tune throughput and latency for specific application needs.
  • Power and retention features: Single 3.0 V–3.6 V supply and self-refresh/auto-refresh capabilities support low-power retention modes and standard system rails.
  • Industrial-temperature capability: Rated for −40 °C to +85 °C (TA), suitable for temperature-sensitive deployments.
  • Compact board footprint: 54‑pin TSOP‑II package provides a space-efficient footprint for board-level memory integration.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S16160D-75ETLI-TR positions itself as a high-performance, fully synchronous 256 Mbit SDRAM option for designs that require predictable clocked operation, programmable burst behavior, and industrial temperature support. Its 16M × 16 organization, internal bank structure and pipeline architecture are suited to systems needing fast, burst-oriented memory with configurable latency.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM with a compact 54-pin TSOP-II package, 3.0 V–3.6 V supply compatibility, and operational capability across −40 °C to +85 °C. The combination of burst programmability, refresh features and LVTTL interface simplifies integration into existing synchronous memory subsystems.

If you require pricing, availability or a formal quotation for IS42S16160D-75ETLI-TR, please request a quote or submit a quote request for sales assistance and delivery details.

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