IS42S16160D-75ETLI-TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,189 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.5 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S16160D-75ETLI-TR – IC DRAM 256MBIT PAR 54TSOP II
The IS42S16160D-75ETLI-TR is a 256Mbit synchronous DRAM (SDRAM) device from ISSI organized as 16M × 16. It implements a pipeline architecture and fully synchronous operation with all signals referenced to the rising edge of the clock, providing a high-speed parallel memory option for designs requiring deterministic clocked access.
Targeted use cases include systems that need fast, burst-capable parallel memory with features such as programmable burst length, programmable CAS latency, internal bank management, and self-refresh. Key value propositions include measured access performance (5.5 ns access time at the -75E grade), support for 133 MHz clocking, and a compact 54-pin TSOP-II package with industrial temperature support.
Key Features
- Memory Core The device provides 256 Mbit SDRAM capacity organized as 16M × 16 with internal bank architecture for hidden row access/precharge.
- Performance Clock frequency support up to 133 MHz for the -75E grade and an access time of 5.5 ns (CL=2, -75E), enabling high-speed, deterministic read/write timing.
- Programmable Burst & Latency Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave), with programmable CAS latency options (2 or 3 clocks) to match system timing requirements.
- Refresh & Self-Refresh Auto-refresh and self-refresh support with 8K refresh cycles (timing options per grade), allowing retention during low-power states.
- Interface LVTTL-compatible parallel interface designed for fully synchronous operation referenced to the positive clock edge.
- Power Single-supply operation within 3.0 V to 3.6 V (typical 3.3 V ±0.3 V) to match common system power rails.
- Package & Temperature 54-pin TSOP-II package (0.400", 10.16 mm width) with an operating temperature range of -40 °C to +85 °C (TA).
Typical Applications
- High‑speed buffer memory — Use as parallel SDRAM buffering for designs that require pipeline-style, clocked data transfers and burst operations.
- Embedded systems — Local system memory for embedded designs leveraging the device's synchronous LVTTL interface, programmable latency and burst control.
- Industrial equipment — Memory for industrial applications that require operation across a wide temperature range (−40 °C to +85 °C).
Unique Advantages
- Deterministic synchronous operation: Fully synchronous inputs and outputs referenced to the rising clock edge simplify timing and integration into clocked memory subsystems.
- High-speed access: -75E grade access time of 5.5 ns (CL=2) and support for 133 MHz clocking enable fast read/write cycles and efficient burst transfers.
- Flexible burst and latency control: Programmable burst length and CAS latency let designers tune throughput and latency for specific application needs.
- Power and retention features: Single 3.0 V–3.6 V supply and self-refresh/auto-refresh capabilities support low-power retention modes and standard system rails.
- Industrial-temperature capability: Rated for −40 °C to +85 °C (TA), suitable for temperature-sensitive deployments.
- Compact board footprint: 54‑pin TSOP‑II package provides a space-efficient footprint for board-level memory integration.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The IS42S16160D-75ETLI-TR positions itself as a high-performance, fully synchronous 256 Mbit SDRAM option for designs that require predictable clocked operation, programmable burst behavior, and industrial temperature support. Its 16M × 16 organization, internal bank structure and pipeline architecture are suited to systems needing fast, burst-oriented memory with configurable latency.
This device is appropriate for engineers and procurement teams specifying parallel SDRAM with a compact 54-pin TSOP-II package, 3.0 V–3.6 V supply compatibility, and operational capability across −40 °C to +85 °C. The combination of burst programmability, refresh features and LVTTL interface simplifies integration into existing synchronous memory subsystems.
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