IS42S16160D-75EBLI-TR

The IS42S16160D-75EBLI-TR is a 256‑Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface and 4 internal banks. It leverages a pipelined, fully synchronous architecture to support high‑speed data transfers referenced to the rising edge of the clock.

Designed for systems that require a 256Mbit parallel SDRAM memory solution with industrial temperature capability, this device provides programmable latency and burst controls, on‑chip refresh modes, and a 54‑ball TFBGA package for space‑efficient board integration.

Key Features

• Memory Architecture Organized as 16M × 16 with 4 internal banks (4M × 16 × 4 banks) to support parallel access and bank interleaving.
• Performance Clock frequency rated at 133 MHz with an access time from clock of 5.5 ns (–75E grade); programmable CAS latency of 2 or 3 clocks.
• Interface & Command Set Fully synchronous operation with LVTTL signalling; supports programmable burst length (1, 2, 4, 8, full page), sequential/interleave burst sequences, burst read/write and burst read/single write operations, and burst termination commands.
• Power Single power supply operation: nominal 3.3 V ±0.3 V (listed supply range 3.0 V to 3.6 V) to match standard 3.3 V system rails.
• Refresh & Reliability Supports Auto Refresh (CBR) and Self Refresh. Refresh options include 8K refresh cycles every 16 ms (A2 grade) or every 64 ms (commercial/industrial/A1 grade).
• Package & Temperature 54‑TFBGA (54‑ball BGA, supplier package 54‑TW‑BGA 8×13) with an operating temperature range of −40 °C to +85 °C (TA) for industrial applications.

Typical Applications

• Industrial embedded systems — Parallel SDRAM memory expansion where industrial operating temperature (−40 °C to +85 °C) and 3.3 V supply compatibility are required.
• High‑speed data buffering — Use as a pipelined synchronous memory for buffering and temporary storage in board‑level designs requiring 133 MHz operation and low access latency.
• System memory for legacy parallel interfaces — Drop‑in 256‑Mbit SDRAM solution for designs using parallel LVTTL signaling and programmable burst modes.

Unique Advantages

• Industry‑standard single 3.3 V supply: Operates from 3.0 V to 3.6 V (3.3 V ±0.3 V), simplifying power rail design in existing 3.3 V systems.
• Programmable latency and burst control: CAS latency selectable (2 or 3) and programmable burst lengths/sequences allow designers to tune throughput and access patterns to application needs.
• On‑chip refresh management: Auto Refresh and Self Refresh options with defined 8K refresh cycles support reliable data retention across duty cycles and power conditions.
• Compact BGA footprint: 54‑TFBGA (8×13) package provides a space‑efficient board mounting option for high‑density designs.
• Industrial temperature range: Specified for −40 °C to +85 °C operation to meet rugged environment requirements.

Why Choose IS42S16160D-75EBLI-TR?

The IS42S16160D-75EBLI-TR delivers a focused 256‑Mbit synchronous DRAM solution with programmable timing, burst capabilities, and on‑chip refresh functions, packaged in a compact 54‑ball TFBGA. Its 133 MHz operating grade (–75E) and 5.5 ns access timing make it suitable for designs that need deterministic, low‑latency parallel memory behavior at standard 3.3 V supply levels.

This device is well suited to engineers building industrial and embedded systems that require a reliable, board‑level SDRAM memory option with configurable performance and a wide operating temperature range.

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