IS42S16160D-6TLI-TR

The IS42S16160D-6TLI-TR is a 256‑Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface. It uses a pipelined architecture and fully synchronous signaling referenced to the rising edge of the system clock to support high-speed data transfer.

Designed for systems requiring a mid-density SDRAM device, the part provides programmable burst options, selectable CAS latency, and built-in refresh capabilities to support deterministic memory access patterns and sustained burst transfers.

Key Features

• Memory Configuration  256 Mbit SDRAM organized as 16M × 16 with internal bank architecture (4 banks) to hide row access and precharge operations.
• Clock and Timing  Supports up to 166 MHz clock frequency (CAS latency = 3) with an access time from clock of 5.4 ns (CL = 3). CAS latency is programmable (2 or 3 clocks).
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential or interleave) for flexible burst read/write operations.
• Refresh and Self-Refresh  Supports Auto Refresh (CBR) and Self Refresh with 8K refresh cycles (A1/A2 grade options per datasheet timing tables).
• Interface  LVTTL-compatible signals with fully synchronous operation; random column address every clock cycle for continuous column access.
• Power  Single power supply operation at 3.3 V ± 0.3 V (listed voltage range 3.0 V to 3.6 V).
• Package and Temperature  Supplied in a 54‑pin TSOP‑II package (0.400", 10.16 mm width). Operating temperature range specified as −40 °C to +85 °C (TA).

Typical Applications

• Embedded system memory — Provides 256 Mbit of synchronous parallel DRAM for designs needing deterministic, clock‑referenced memory access.
• High‑throughput buffering — Pipelined architecture and programmable burst modes enable efficient burst transfers for buffer and frame storage use cases.
• Industrial‑temperature designs — Rated for −40 °C to +85 °C operation to meet requirements of industrial environments.

Unique Advantages

• Fully synchronous, clock‑referenced operation — All signals are referenced to the positive clock edge, simplifying timing and system integration.
• Flexible burst control — Programmable burst lengths and sequences allow tuning memory throughput for different transfer patterns.
• Selectable CAS latency and fast access time — CAS latency of 2 or 3 clocks and access time from clock as low as 5.4 ns (CL = 3) provide deterministic read timing.
• Internal bank architecture — Four internal banks hide row access and precharge to improve sustained transfer efficiency.
• Industrial temperature support — Operation from −40 °C to +85 °C supports deployment in temperature‑sensitive systems.
• Standard TSOP‑II package — 54‑pin TSOP‑II package aids compact board-level integration.

Why Choose IS42S16160D-6TLI-TR?

The IS42S16160D-6TLI-TR delivers a balanced combination of synchronous pipelined performance, flexible burst operation, and industrial temperature capability in a compact 54‑pin TSOP‑II package. Its 16M × 16 organization, programmable CAS latency, and refresh features make it suitable for systems that require predictable, high‑throughput parallel DRAM behavior.

This device is appropriate for designers specifying a 256‑Mbit SDRAM with LVTTL signaling and a single 3.3 V supply, where controlled timing, burst flexibility, and industrial temperature range are priorities. Detailed timing and operating parameters are documented in the product datasheet for integration and validation.

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