IS42S16160D-6TL-TR

The IS42S16160D-6TL-TR is a 256‑Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface in a 54‑pin TSOP‑II package. It uses a pipelined, fully synchronous architecture with all signals referenced to the rising edge of the clock to support high‑speed data transfer in commercial temperature applications.

This device targets designs requiring a compact 256‑Mbit SDRAM solution with programmable burst modes, selectable CAS latency, and standard refresh features for system memory and buffering at clock rates up to 166 MHz.

Key Features

• Memory Organization  16M × 16 configuration delivering 256 Mbit of synchronous DRAM storage in a single device.
• Performance  Clock frequency up to 166 MHz (CAS latency = 3) with an access time from clock of 5.4 ns (CAS latency = 3), enabling high‑rate data transfers.
• Synchronous Pipeline Architecture  Fully synchronous operation with all inputs/outputs referenced to the positive clock edge and internal bank architecture to hide row access/precharge.
• Programmable Burst and Latency  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave), with CAS latency selectable between 2 and 3 clocks.
• Refresh and Self‑Refresh  Auto Refresh (CBR), self‑refresh capability and standard refresh cycles (8K cycles per refresh interval options documented in the datasheet).
• Interface and Logic Levels  LVTTL interface for control and address signals and a parallel memory interface for conventional SDRAM system integration.
• Power  Single supply operation at 3.3 V ± 0.3 V (3.0 V to 3.6 V specified).
• Package and Temperature  54‑pin TSOP‑II (0.400", 10.16 mm width) with a commercial operating temperature range of 0 °C to +70 °C (TA).

Typical Applications

• Commercial Embedded Systems  Use as system memory or external SDRAM for embedded platforms that require 256‑Mbit capacity and synchronous interface timing.
• Data Buffering  Employed for high‑throughput buffering in designs that need predictable, clock‑referenced read/write operations and programmable burst behavior.
• Memory Expansion  Suitable for adding parallel SDRAM capacity in compact board designs where TSOP‑II packaging and a 3.3 V supply are required.

Unique Advantages

• High clock capability  Supports up to 166 MHz operation (CAS = 3), providing fast, clock‑aligned transfers for timing‑sensitive applications.
• Flexible burst and latency control  Programmable burst lengths and CAS latency options let designers tune throughput and access timing to system needs.
• Standard power domain  Single 3.3 V supply simplifies power rail design and integration with common legacy and commercial systems.
• Compact package  54‑pin TSOP‑II packaging (10.16 mm width) offers a small form factor for space‑constrained boards.
• Built‑in refresh management  Auto refresh and self‑refresh modes reduce external refresh handling and help maintain data integrity over standard refresh intervals.
• Synchronous, pipelined operation  Predictable, clock‑referenced IO and internal bank architecture optimize throughput and simplify timing analysis.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S16160D-6TL-TR delivers a straightforward 256‑Mbit SDRAM building block with clearly specified timing, programmable burst behavior, and industry‑standard LVTTL signaling. Its 16M × 16 organization, support for up to 166 MHz operation, and 3.3 V single‑supply operation make it suitable for commercial designs that need a compact, synchronous DRAM solution in TSOP‑II packaging.

This device is suited to engineers and procurement teams seeking a documented, timing‑defined SDRAM component for memory expansion, buffering, or system memory duties where commercial temperature operation and standard refresh features meet design requirements.

Request a quote or submit a component inquiry to obtain pricing, availability, and lead‑time information for the IS42S16160D-6TL-TR.