IS42S16160D-6BLI-TR

The IS42S16160D-6BLI-TR is a 256Mbit synchronous DRAM organized as 16M x 16 with a fully synchronous, pipelined architecture. It provides parallel SDRAM storage with programmable burst modes and CAS latency options for systems that require deterministic, clock-referenced memory behavior.

Key value lies in its synchronous pipeline design, support for up to 166 MHz clocking (CAS latency = 3), and broad operating voltage and temperature windows suitable for many digital and industrial-grade designs.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipeline architecture; all inputs and outputs referenced to the rising edge of the clock.
• Memory Organization  256 Mbit capacity organized as 16M × 16 with four internal banks for concurrent bank management.
• Clock & Timing  Supports up to 166 MHz clock frequency (CAS latency = 3) with an access time from clock of 5.4 ns for CAS = 3 and programmable CAS latency of 2 or 3 clocks.
• Burst & Transfer Modes  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh & Power Management  Supports Auto Refresh (CBR) and Self Refresh; refresh intervals include 8K cycles per 16 ms (A2 grade) or 8K cycles per 64 ms (commercial/industrial/A1 grade).
• Interface & Logic Levels  Parallel LVTTL interface optimized for synchronous memory systems.
• Power  Single power supply: 3.3 V ± 0.3 V (3.0 V–3.6 V).
• Package & Temperature  54-ball TFBGA package (54-TFBGA / 54-ball BGA, 8×13 footprint) with operating temperature range −40°C to +85°C (TA) specified.

Typical Applications

• Parallel SDRAM memory expansion  Use where a 256 Mbit synchronous parallel DRAM is required for system-level data storage and buffering.
• High-speed buffering and data paths  Suitable for designs leveraging the device's pipeline architecture and up to 166 MHz clocking for timed data throughput.
• Industrial temperature systems  The −40°C to +85°C operating range supports deployments in environments that require industrial thermal tolerance.
• BGA-based board designs  Intended for PCBs designed around a 54-ball BGA (8×13) footprint where compact BGA packaging is required.

Unique Advantages

• Synchronous pipeline architecture: Enables rising-edge-referenced signal timing for predictable, clocked data transfers.
• Flexible burst control: Programmable burst lengths and sequence options allow tuning of transfer behavior to match system access patterns.
• Selectable CAS latency: CAS = 2 or 3 options provide design flexibility between latency and maximum clock rate (166 MHz at CAS = 3).
• Comprehensive refresh modes: Auto Refresh and Self Refresh support with defined 8K refresh cycle timing for different grade options.
• Standard 3.3 V supply: Operates from a single 3.3 V ±0.3 V supply for straightforward power system integration.
• Compact BGA footprint: 54-ball TFBGA (8×13) package reduces board area while supporting SMT assembly.

Why Choose IS42S16160D-6BLI-TR?

The IS42S16160D-6BLI-TR positions itself as a straightforward, synchronous parallel DRAM option for designs needing 256 Mbit capacity with programmable burst behavior and selectable CAS latency. Its pipeline architecture and LVTTL interface make it suitable for clocked memory subsystems that require synchronous operation and predictable timing.

With support for a 3.3 V supply, industrial temperature operation to −40°C, and a compact 54-ball BGA package, this device serves designs that require reliable, board-level SDRAM integration and refresh management options. It is appropriate for engineers specifying memory for systems where synchronous parallel DRAM and defined timing parameters are required.

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