IS42S16160D-6BL

The IS42S16160D-6BL is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture with inputs and outputs referenced to the rising edge of the clock to deliver predictable high-speed data transfers.

Designed for systems that require compact, parallel SDRAM capacity and predictable timing, this device addresses applications where high-frequency clocking, programmable burst operations and flexible refresh options are needed.

Key Features

• Memory Core 256 Mbit SDRAM organized as 16M × 16 with internal bank architecture for row access/precharge hiding.
• Performance Supports a clock frequency up to 166 MHz with an access time from clock of 5.4 ns (CAS latency = 3). Programmable CAS latency options include 2 and 3 clocks.
• Burst and Sequencing Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh and Self-Refresh Auto refresh (CBR) and self-refresh supported; 8K refresh cycles are specified with selectable timing options (e.g., 16 ms or 64 ms as applicable).
• Interface and Logic Levels LVTTL-compatible interface with all signals referenced to the positive clock edge for synchronous operation.
• Power Single power supply operation: 3.0 V to 3.6 V (3.3 V ±0.3 V).
• Package and Mounting 54-ball TFBGA package (54-TFBGA / 54-ball BGA, 8×13 footprint) for compact board-level integration.
• Operating Conditions Commercial operating temperature range: 0°C to 70°C (TA).

Typical Applications

• Embedded Systems — Parallel SDRAM capacity for embedded controllers and DSP systems requiring synchronous high-speed memory.
• Consumer Electronics — System memory in consumer devices that demand programmable burst modes and predictable CAS-latency timing.
• Networking and Telecom Equipment — Buffer memory for packet processing or data staging where deterministic synchronous transfers are required.

Unique Advantages

• Deterministic Synchronous Operation: All signals referenced to the rising clock edge provide predictable timing for tightly timed designs.
• Flexible Data Transfer Modes: Programmable burst length and sequence plus CAS latency options enable tuning for throughput or latency trade-offs.
• Compact BGA Footprint: 54-ball TFBGA package reduces PCB area while delivering 256 Mbit of parallel SDRAM capacity.
• Standard 3.3 V Power Domain: Operates from a single 3.0 V to 3.6 V supply for compatibility with common system power rails.
• Built-in Refresh Management: Auto and self-refresh support with defined refresh cycle options simplify memory maintenance in runtime and low-power states.

Why Choose IS42S16160D-6BL?

The IS42S16160D-6BL positions itself as a compact, high-frequency synchronous DRAM option for designs that need 256 Mbit of parallel SDRAM with programmable burst and latency behavior. Its 166 MHz clock capability (CAS=3) and 5.4 ns access time from clock offer designers a predictable, high-speed memory building block.

Ideal for engineers specifying system memory for embedded, consumer, and networking applications, this device combines standard 3.3 V power operation, LVTTL signaling, and a small 54-ball TFBGA package to simplify integration while preserving flexibility in timing and refresh management.

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