IS42S16160B-7TLI

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 163 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160B-7TLI – IC DRAM 256MBIT PAR 54TSOP II

The IS42S16160B-7TLI is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface and a 54-pin TSOP-II package. It implements a fully synchronous, quad-bank architecture with pipeline operation to support high-speed, burst-oriented data transfers in 3.3 V memory systems.

Designed for systems that require deterministic, high-throughput memory operations, this device offers programmable burst lengths and CAS latency options, power-saving refresh modes, and an industrial operating temperature range for use in temperature-constrained applications.

Key Features

  • Memory Architecture  256 Mbit SDRAM organized as 16M × 16 with internal quad-bank configuration to support concurrent bank operations and hidden row precharge.
  • Performance  Clock rate up to 143 MHz (‑7 speed grade) with an access time from clock of 5.4 ns (CAS latency = 3), and programmable CAS latency of 2 or 3 clocks for performance tuning.
  • Burst and Access Modes  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave), supporting burst read/write and burst read/single write operations with burst termination options.
  • Refresh and Power Management  Auto Refresh and Self Refresh support with 8K refresh cycles every 64 ms, plus a power-down mode to reduce standby power.
  • Interface  Fully synchronous operation with all signals referenced to the positive clock edge and LVTTL-compatible inputs/outputs for standard 3.3 V memory system integration.
  • Voltage and Temperature  Operating supply range of 3.0 V to 3.6 V and an industrial operating temperature range of -40 °C to 85 °C.
  • Package  54-pin TSOP-II (0.400", 10.16 mm width) package; the device family is also offered in 54-ball BGA (x16 only) and available in lead-free options.

Typical Applications

  • 3.3 V Memory Subsystems  Used as synchronous DRAM memory in 3.3 V system architectures where deterministic burst transfers and CAS latency control are required.
  • Embedded Systems  Provides 256 Mbit of volatile storage for embedded controllers and processors that require pipelined, high-speed parallel memory access.
  • Industrial Equipment  Suitable for industrial designs that need extended temperature operation (‑40 °C to 85 °C) while maintaining SDRAM performance.

Unique Advantages

  • Synchronous Pipeline Architecture: Registered inputs and outputs referenced to the clock edge enable predictable, high-speed burst transfers.
  • Flexible Performance Tuning: Programmable CAS latency and selectable burst lengths/sequence allow designers to match memory timing to system requirements.
  • Bank Interleaving and Hidden Precharge: Internal multi-bank design hides row-access/precharge time to improve effective throughput in random-access patterns.
  • Power-saving Modes: Auto Refresh, Self Refresh and power-down reduce standby power in duty-cycled or low-activity systems.
  • Industrial-grade Operating Range: Wide operating temperature and standard 3.0–3.6 V supply compatibility simplify integration into industrial and harsh-environment designs.
  • Standard Packaging Options: 54-pin TSOP-II package provides a compact, board-level solution with lead-free availability for manufacturing flexibility.

Why Choose IS42S16160B-7TLI?

The IS42S16160B-7TLI positions itself as a deterministic, high-speed SDRAM option for designs that demand programmable burst behavior, selectable CAS latency, and robust refresh/power modes. Its 16M × 16 organization and quad-bank architecture deliver the memory density and internal concurrency needed for sustained burst transfers in 3.3 V systems.

This device is well suited for engineers specifying memory for embedded and industrial applications where extended temperature range, predictable timing (5.4 ns access time @ CL=3), and standard TSOP-II packaging are required. The combination of configurable timing, bank interleaving, and refresh capabilities provides long-term design flexibility and operational reliability.

Request a quote or submit a pricing and availability inquiry to discuss lead times, package options, and volume pricing for the IS42S16160B-7TLI.

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