IS42S16160B-7TI

The IS42S16160B-7TI is a 256‑Mbit synchronous DRAM organized as 16M × 16 with a parallel LVTTL interface and quad‑bank internal architecture. It implements a pipeline synchronous design with programmable burst and CAS timing to support high‑rate, burst‑oriented memory transfers.

Designed for 3.0–3.6 V systems (3.3 V operation per device specification) and rated for -40°C to 85°C, the device targets systems that require a compact 54‑pin TSOP‑II (10.16 mm) footprint and deterministic SDRAM behavior for buffering and high‑speed data access.

Key Features

• Memory Architecture — 256 Mbit SDRAM organized as 16M × 16 with quad internal banks to support interleaved access and hidden row precharge.
• Performance — Supports clock frequencies of 166, 143, and 133 MHz (‑6, ‑7, ‑8 timing options) with programmable CAS latency of 2 or 3 and access time from clock as low as 5.4 ns (CAS = 3).
• Burst and Sequencing — Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleave burst sequencing for flexible data transfer patterns.
• Refresh and Power Modes — Auto Refresh, Self Refresh and CBR features with 8K refresh cycles every 64 ms for data retention and power management.
• Interface and Signaling — LVTTL‑compatible inputs/outputs and parallel memory interface suitable for synchronous, clock‑edge referenced operation.
• Voltage and Supply — Operates across a 3.0 V to 3.6 V supply range; designed for 3.3 V memory systems per device specification.
• Package and Temperature — Available in 54‑pin TSOP‑II (0.400", 10.16 mm width) and specified for industrial temperature operation from -40°C to 85°C.

Typical Applications

• Industrial systems — Memory buffering and data storage in systems that require operation across an industrial temperature range (-40°C to 85°C).
• Parallel data subsystems — 16‑bit parallel memory expansion where a 16M × 16 organization and LVTTL interface are required for burst transfers and deterministic timing.
• High‑rate buffering — Synchronous burst read/write operations for designs that leverage programmable burst lengths and CAS latency to tune throughput and latency.

Unique Advantages

• Configurable performance — Programmable CAS latency (2 or 3) and multiple clock grades (166/143/133 MHz) let designers match timing to system requirements.
• Flexible burst modes — Burst lengths from 1 to full page and selectable sequential/interleave sequencing simplify data transfer patterns and reduce controller complexity.
• Quad‑bank architecture — Internal bank structure supports bank interleaving to hide precharge time and improve sustained access efficiency.
• Industrial temperature rating — Specified operation from -40°C to 85°C addresses thermal requirements for deployed industrial electronics.
• Space‑efficient package — 54‑pin TSOP‑II (10.16 mm width) delivers a compact footprint for board designs with parallel SDRAM needs.

Why Choose IS42S16160B-7TI?

The IS42S16160B-7TI provides a deterministic, synchronous 256‑Mbit DRAM solution with programmable timing, burst flexibility, and an internal quad‑bank architecture that supports efficient high‑rate transfers. Its 16M × 16 organization and LVTTL interface make it a direct fit for designs requiring parallel SDRAM in a compact TSOP‑II package.

This device is suitable for engineers and procurement teams specifying memory for systems operating at standard 3.3 V memory voltages and across industrial temperature ranges, offering tunable performance and established SDRAM control features such as auto/self refresh and burst termination mechanisms.

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