IS42S16160B-7BLI

The IS42S16160B-7BLI is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous, pipeline architecture with internal bank management to support high-speed burst-oriented transfers.

This device targets designs that require a 256 Mbit SDRAM solution with up to 143 MHz clock operation, programmable burst options and industrial temperature operation for robust system memory and buffering functions.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipeline architecture; all inputs and outputs are referenced to the rising edge of the clock.
• Memory Organization  256 Mbit capacity configured as 16M × 16 (quad-bank internal organization) to support burst read/write operations.
• Performance / Timing  Rated clock frequency 143 MHz (‑7 speed grade) with programmable CAS latency (2 or 3 clocks) and an access time of 5.4 ns for CAS‑3 operation.
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh and Power Modes  Auto Refresh (CBR), self-refresh and power-down modes supported; 8K refresh cycles every 64 ms as specified.
• Interface / I/O  LVTTL-compatible I/O signaling with parallel memory interface and support for random column address every clock cycle during bursts.
• Supply Voltage  Operates from 3.0 V to 3.6 V (documented 3.3 V VDD/VDDQ in datasheet).
• Package and Mounting  54-ball LFBGA package (54-LFBGA, 8 × 13) for compact board-level mounting.
• Operating Temperature  Industrial temperature range: −40 °C to 85 °C (TA).

Typical Applications

• High-speed system memory  Devices and subsystems requiring a 256 Mbit SDRAM organized as 16M × 16 and synchronous burst capability up to 143 MHz.
• Parallel memory subsystems  Designs using LVTTL-compatible parallel SDRAM interfaces for buffering and data staging in synchronous systems.
• Industrial-temperature systems  Applications requiring memory operation across −40 °C to 85 °C.

Unique Advantages

• Synchronous pipeline architecture: Internal bank structure and synchronous operation enable efficient burst access and bank interleaving to hide precharge delays.
• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) and sequence options (sequential/interleave) adapt to varied data transfer patterns.
• Programmable latency and proven timing: CAS latency options (2 or 3 clocks) with documented access time of 5.4 ns (CAS‑3) for predictable timing design.
• Power and refresh features: Auto Refresh, self-refresh and power‑down support help manage power and data retention within the 8K/64 ms refresh specification.
• Compact package: 54‑ball LFBGA (8 × 13) provides a space-efficient mounting option for board-level integration.
• Industrial temperature range: Rated for −40 °C to 85 °C to support extended-environment deployments.

Why Choose IS42S16160B-7BLI?

The IS42S16160B-7BLI delivers a verified 256 Mbit SDRAM solution with synchronous pipeline operation, programmable burst capabilities and flexible timing options, making it suitable for designs that require deterministic high-speed memory behavior. Its 16M × 16 organization, LVTTL-compatible interface and compact 54‑LFBGA package simplify integration into space-constrained, performance-oriented systems.

With documented timing (143 MHz operation at the ‑7 speed grade, CAS latency settings and 5.4 ns access time for CAS‑3) and industrial temperature support, this device is appropriate for engineering teams specifying a reliable 256 Mbit SDRAM building block for long-term deployments.

To request a quote or submit a product inquiry for the IS42S16160B-7BLI, please contact sales or request product pricing and availability.