IS42S16160B-6TLI

The IS42S16160B-6TLI is a 256‑Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a quad‑bank architecture and fully synchronous, pipeline operation. It is designed for 3.0–3.6 V memory systems (datasheet references 3.3 V operation) and supports high‑speed burst transfers referenced to the rising edge of a system clock.

Its core capabilities—programmable burst lengths and sequences, internal bank interleaving, and support for Auto and Self Refresh—make it suitable for systems that require deterministic, low‑latency parallel memory access in a 54‑pin TSOP‑II package and industrial temperature range.

Key Features

• Memory Core and Organization 256 Mbit SDRAM organized as 16M × 16 with 4 internal banks to enable bank interleaving and hidden row precharge for improved access efficiency.
• Performance Clock frequency options including 166 MHz (device -6), with access time as low as 5.4 ns (CAS latency = 3) and programmable CAS latency of 2 or 3 clocks.
• Burst and Sequencing Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst read/write and burst read/single write operations with burst termination options.
• Refresh and Power Modes Supports Auto Refresh and Self Refresh with 8K refresh cycles every 64 ms and includes power‑saving power‑down modes.
• Interface and I/O LVTTL‑compatible interface with random column addressing every clock cycle and all signals registered on the positive clock edge for synchronous system integration.
• Package and Temperature Available in a 54‑pin TSOP‑II (0.400", 10.16 mm width) package and offered in industrial operating temperature range of −40 °C to +85 °C.
• Supply Voltage Operates from 3.0 V to 3.6 V (datasheet specifies 3.3 V VDD/VDDQ operation for the device family).

Unique Advantages

• Synchronous pipeline architecture: Registered I/O and clock‑referenced operation provide predictable timing for burst transfers and system timing integration.
• Flexible burst control: Programmable burst lengths and sequences allow designers to match memory behavior to system access patterns and reduce software complexity.
• Low read latency at high clock rates: Access time of 5.4 ns at CAS‑3 and support for up to 166 MHz clocking enable fast data retrieval in latency‑sensitive designs.
• Bank interleaving with internal precharge: Quad‑bank organization hides row access/precharge cycles to sustain higher effective throughput during random accesses.
• Industrial temperature availability: Specified for −40 °C to +85 °C operation to meet applications with extended ambient requirements.
• Standard 54‑pin TSOP‑II footprint: Compact package choice for board‑level memory integration where a parallel SDRAM form factor is required.

Why Choose IS42S16160B-6TLI?

The IS42S16160B-6TLI delivers a purpose‑built 256‑Mbit SDRAM solution with synchronous, burst‑oriented operation and programmable timing that aligns with system designs requiring predictable, high‑speed parallel memory access. Its combination of low access time, programmable burst and CAS options, and internal bank architecture provides designers with both performance flexibility and deterministic timing.

This device is suited to designs that require a 16‑bit wide SDRAM in a compact 54‑pin TSOP‑II package and operation across industrial temperatures. The specified supply range and LVTTL interface simplify integration into 3.3 V system memory subsystems while maintaining standard SDRAM control features such as Auto and Self Refresh.

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