IS42S16160B-6T

The IS42S16160B-6T is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M × 16 with a parallel memory interface and a 54-pin TSOP-II package. It implements a pipelined, fully synchronous architecture with internal quad-bank organization to support high-speed, burst-oriented memory transfers.

This device targets system designs that require configurable burst access, programmable CAS latency and standard TSOP-II mounting, providing deterministic timing and refresh management through Auto Refresh and Self Refresh modes.

Key Features

• Core / Memory Organization 256 Mbit density arranged as 16M × 16 with quad-bank architecture (4M × 16 × 4 banks) and 8,192 rows per bank as documented in the device overview.
• Performance Clock frequency options up to 166 MHz (–6 speed grade) with programmable CAS latency (2 or 3 clocks) and an access time from clock of 5.4 ns for CL=3. The device supports random column address changes every clock cycle and burst read/write operations.
• Burst and Sequencing Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence modes (Sequential/Interleave) for flexible data-transfer patterns and memory throughput tuning.
• Refresh and Power Management Auto Refresh (CBR), Self Refresh, and support for 8K refresh cycles every 64 ms; includes a power-down mode for reduced power consumption during idle periods.
• Interface Parallel SDRAM interface with LVTTL-compatible inputs/outputs and synchronous signaling referenced to the rising edge of CLK.
• Voltage and Timing Operating supply range noted as 3.0 V to 3.6 V (datasheet references VDD/VDDQ = 3.3 V). Key timing points are provided for –6 and –7 speed grades, including CL=3 operation at 166 MHz (–6).
• Package and Temperature Supplied in a 54-pin TSOP-II package (0.400", 10.16 mm width) with an operating ambient temperature range of 0 °C to 70 °C. Lead-free options are listed in the device documentation.

Unique Advantages

• High-speed synchronous transfers: 166 MHz clock support with pipelined architecture and bank interleaving enables sustained burst data throughput for synchronous memory applications.
• Configurable latency and burst control: Programmable CAS latency (2 or 3) and multiple burst-length/sequence options allow designers to tune latency versus throughput for target workloads.
• Hidden precharge via quad-bank design: Internal bank structure and auto precharge features let one bank be precharged while others are accessed, reducing effective access gaps and improving overall access efficiency.
• Robust refresh management: Auto Refresh, Self Refresh and defined 8K/64 ms refresh cycles provide predictable data retention behavior for system power-management strategies.
• Standard package footprint: 54-pin TSOP-II (10.16 mm width) simplifies board-level integration into systems designed for common TSOP memory footprints.
• Flexible supply compatibility: Documented VDD/VDDQ at 3.3 V with a specified supply range of 3.0–3.6 V supports integration into 3.3 V memory subsystems.

Why Choose IS42S16160B-6T?

The IS42S16160B-6T delivers a standard, well-documented 256 Mbit SDRAM option with configurable burst behavior, selectable CAS latency and a synchronous LVTTL interface—suitable for designs that require predictable, burst-oriented memory access and refresh control. Its quad-bank, pipelined architecture and timing data for the –6 speed grade support high-rate synchronous transfers in a common TSOP-II form factor.

This device is appropriate for engineers specifying a 16M × 16 SDRAM density with explicit timing, refresh and package details; the documented options for burst sequencing, CL selection and refresh modes make it a practical choice for systems needing configurable memory timing and power-management features.

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