IS42S16160B-6TL

The IS42S16160B-6TL is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel interface in a 54-pin TSOP-II package. It provides a fully synchronous, quad-bank architecture with pipeline operation designed for high-speed burst access and predictable timing.

Targeted at designs requiring a 256 Mbit SDRAM device with 166 MHz clock capability and low-nanosecond access, the device delivers programmable burst modes, refresh options and LVTTL-compatible signalling for system memory expansion and high-throughput data buffering.

Key Features

• Core Architecture  Fully synchronous SDRAM with internal quad-bank organization and pipeline operation to enable high-speed burst transfers and bank interleaving.
• Memory Organization & Capacity  256 Mbit total capacity arranged as 16M × 16, providing a x16 data width for parallel memory interfaces.
• Performance & Timing  Rated for a 166 MHz clock (‑6 speed grade) with programmable CAS latency (2 or 3 clocks); CAS=3 yields an access time from clock of 5.4 ns.
• Burst & Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave), with random column address capability every clock cycle and burst termination support.
• Refresh & Power Modes  Supports Auto Refresh, Self Refresh and power-down modes with 8K refresh cycles every 64 ms to maintain data integrity during low-power states.
• Interface & Signalling  LVTTL-compatible inputs/outputs and a parallel memory interface for direct integration into synchronous memory subsystems.
• Power Supply  Operates from a 3.0 V to 3.6 V supply.
• Package & Temperature  Available in a 54-pin TSOP-II package (0.400" / 10.16 mm width) and specified for an ambient operating range of 0°C to 70°C (TA).

Typical Applications

• System Memory Expansion  Used as on-board SDRAM for designs requiring a 256 Mbit parallel memory with 16-bit data width.
• High-Speed Data Buffers  Employed where pipelined burst transfers and bank interleaving are needed to sustain high-throughput temporary storage.
• Embedded Platforms  Suitable for embedded systems that require synchronous DRAM with programmable latency and multiple burst options within a compact TSOP-II footprint.

Unique Advantages

• High clock-rate capability: Supports a 166 MHz clock (‑6 grade) enabling low-latency operation with CAS=3 and 5.4 ns access from clock.
• Flexible burst control: Programmable burst lengths and sequences allow designers to tailor read/write bursts to application throughput and access patterns.
• Power management options: Auto Refresh, Self Refresh and power-down modes reduce power draw during idle periods while maintaining data retention.
• LVTTL-compatible signalling: Standard LVTTL inputs/outputs simplify logic interfacing in systems using parallel SDRAM interfaces.
• Compact TSOP-II package: 54-pin TSOP-II (10.16 mm width) offers a space-efficient footprint for board-level memory implementations.

Why Choose IS42S16160B-6TL?

The IS42S16160B-6TL positions itself as a straightforward, specification-driven 256 Mbit SDRAM option for designs that require a parallel x16 memory with synchronous operation, programmable burst control and low-nanosecond access timing. Its support for 166 MHz operation, CAS latency options and standard LVTTL signalling make it suitable for systems where predictable timing and burst-oriented transfers are required.

This device is appropriate for engineers and procurement teams specifying a 256 Mbit SDRAM in a 54-pin TSOP-II package within a 0°C to 70°C ambient range and a 3.0 V–3.6 V supply envelope, providing a clear, verifiable specification set for system memory implementations.

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