IS42S16160B-7BL

The IS42S16160B-7BL is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel LVTTL interface. It uses a pipelined, fully synchronous architecture with internal bank interleaving to support high-speed data transfers and efficient random-access burst operation.

Designed for systems that require a 256 Mbit SDRAM device in a compact 54-ball LFBGA package, the device supports a 143 MHz clock speed (–7 speed grade), a 5.4 ns access time (CAS = 3), 3.0–3.6 V supply range, and operation from 0 °C to 70 °C.

Key Features

• Memory Type & Organization — 256 Mbit DRAM organized as 16M × 16 bits (quad-bank configuration) for parallel data paths and efficient memory mapping.
• Synchronous Operation — Fully synchronous design with all signals referenced to the rising edge of CLK for predictable timing and pipeline transfers.
• Clock & Timing — –7 speed grade supports 143 MHz clock frequency; CAS latency programmable to 2 or 3 clocks with a 5.4 ns access time at CAS = 3.
• Burst Control & Addressing — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave). Random column address capability every clock cycle.
• Bank Architecture & Refresh — Internal bank structure to hide row access/precharge times; supports Auto Refresh, Self Refresh, and 8K refresh cycles every 64 ms.
• Interface & Voltage — LVTTL-compatible interface with a parallel memory interface; recommended supply range 3.0 V to 3.6 V (VDD/VDDQ at 3.3 V per device family specification).
• Package & Temperature — 54-ball LFBGA (8 × 13) package in a compact footprint; specified operating temperature range 0 °C to 70 °C.

Typical Applications

• Embedded system memory expansion — Provides 256 Mbit of synchronous DRAM capacity for systems requiring parallel memory with predictable timing and burst access.
• High-speed buffering — Suited for designs needing rapid burst read/write buffering with programmable burst lengths and low access latency.
• Memory subsystems in compact designs — The 54-ball LFBGA package makes the device appropriate where board space is constrained and dense memory is required.

Unique Advantages

• Deterministic synchronous timing: Fully synchronous operation with CLK-referenced signals simplifies timing analysis and system integration.
• Flexible performance tuning: Programmable CAS latency and burst length allow designers to match memory timing to system requirements.
• Efficient random-access bursts: Internal bank interleaving and per-clock random column addressing support sustained high-throughput burst operations.
• Robust refresh and power modes: Auto Refresh and Self Refresh modes with standard 8K/64 ms refresh cycles provide reliable data retention management.
• Compact, production-ready package: 54-LFBGA (8×13) package offers a small footprint for space-limited board designs while delivering 256 Mbit density.

Why Choose IS42S16160B-7BL?

The IS42S16160B-7BL combines a synchronous, pipelined SDRAM architecture with programmable timing and burst control to deliver predictable high-speed memory behavior for designs that need 256 Mbit of parallel DRAM. Its quad-bank organization, support for Auto/Self Refresh, and LVTTL interface make it suitable for systems where controlled latency and burst throughput matter.

This device is appropriate for engineers specifying commercial-temperature SDRAM in a compact 54-ball LFBGA package and a 3.0–3.6 V supply domain. Its configurable timing and burst options help align memory performance with a range of embedded and high-throughput buffering applications.

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