IS42S16160B-7T

The IS42S16160B-7T is a 256‑Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface and a 54‑pin TSOP‑II package. It implements a fully synchronous, quad‑bank architecture with registered inputs and outputs referenced to the rising edge of the clock.

Designed for systems that require a compact, parallel 256‑Mbit memory element, the device delivers programmable burst operation, selectable CAS latency, and bank interleave to support high‑speed, pipelined memory access patterns.

Key Features

• Memory Organization — 256 Mbit capacity arranged as 16M × 16 with internal quad‑bank architecture for concurrent bank operation.
• Synchronous SDRAM Core — Fully synchronous operation with all signals referenced to a positive clock edge; supports programmable CAS latency (2, 3 clocks) and programmable burst lengths (1, 2, 4, 8, full page).
• Performance — Rated clock frequency include 143 MHz for the -7 speed grade; typical access time from clock is 5.4 ns at CAS latency = 3.
• Interface — LVTTL compatible interface and parallel memory interface with burst read/write and burst read/single write capability; supports sequential and interleave burst sequences.
• Power — Operates from a 3.0 V to 3.6 V supply range; supports Auto Refresh, Self Refresh and power‑down modes for memory retention and reduced power during idle periods.
• Reliability & Refresh — Auto Refresh (CBR) and Self Refresh supported with 8K refresh cycles every 64 ms to maintain data integrity.
• Package & Temperature — Available in 54‑pin TSOP‑II (0.400", 10.16 mm width); specified operating ambient temperature range 0°C to 70°C (TA).

Typical Applications

• Embedded memory subsystems — Provides a 256‑Mbit SDRAM organized as 16M × 16 for systems that require parallel SDRAM memory expansion within a 54‑pin TSOP‑II footprint.
• Buffered high‑speed data paths — Programmable burst lengths and bank interleave enable pipelined burst transfers for systems needing predictable burst performance at clock rates up to 143 MHz.
• System boards with LVTTL interfaces — LVTTL signaling and parallel interface suit designs that integrate synchronous DRAM with TTL‑level control logic.

Unique Advantages

• Quad‑bank architecture: Internal bank structure enables interleaving and hiding of precharge cycles to support continuous pipelined access.
• Flexible burst control: Programmable burst lengths and burst sequence modes (sequential/interleave) simplify memory access patterns for varied data transfer needs.
• Selectable CAS latency: CAS latency options (2 or 3 clocks) allow designers to trade latency and clock rate to match system timing requirements.
• Compact TSOP‑II package: 54‑pin TSOP‑II (0.400", 10.16 mm width) enables a small PCB footprint for space‑constrained board designs.
• Standard supply voltage range: Operates from 3.0 V to 3.6 V, with VDD/VDDQ implemented at 3.3 V in the datasheet, aligning with common 3.3 V memory systems.

Why Choose IS42S16160B-7T?

The IS42S16160B-7T delivers a compact, fully synchronous 256‑Mbit SDRAM solution with flexible burst modes, selectable CAS latency, and a quad‑bank structure that supports pipelined data transfers. Its 54‑pin TSOP‑II package and LVTTL interface make it suitable for designs that require a parallel SDRAM element with predictable timing at up to 143 MHz.

This device is well suited to engineers and procurement teams specifying a 16M × 16 SDRAM for systems operating within a 0°C to 70°C ambient range, where standard 3.0–3.6 V supply compatibility and a known TSOP‑II footprint are required for board integration and long‑term design stability.

Request a quote or submit a part inquiry for IS42S16160B-7T to obtain pricing and availability information for your next design or production run.