IS42S16160B-6BL

The IS42S16160B-6BL is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous, pipeline architecture with internal banks and burst operation to support high-speed data transfers.

This device is specified for a 3.0 V to 3.6 V supply and is packaged in a 54-ball LFBGA (8 × 13) footprint, providing 166 MHz clock operation (–6 speed grade) and an access time of 5.4 ns for designs requiring compact, high-throughput parallel memory.

Key Features

• Memory Core – 256 Mbit SDRAM organized as 16M × 16 with internal quad-bank architecture to support interleaved operation and efficient row precharge.
• High-Speed Operation – Clock frequency up to 166 MHz for the –6 speed grade and an access time of 5.4 ns (CAS latency = 3).
• Programmable Burst and CAS – Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); CAS latency selectable at 2 or 3 clocks.
• Synchronous Interface – Fully synchronous operation with all signals referenced to the positive clock edge and LVTTL-compatible inputs/outputs.
• Refresh and Power Management – Auto Refresh and Self Refresh support with 8K refresh cycles every 64 ms and power-down capability to manage dynamic data retention.
• Voltage and I/O – VDD/VDDQ operation around 3.3 V (specified operating supply range 3.0 V to 3.6 V) for standard 3.3 V memory systems.
• Package and Temperature – 54-ball LFBGA (8 × 13) package; specified operating ambient temperature 0°C to 70°C (TA).

Typical Applications

• Parallel memory subsystems — Acts as a 256 Mbit parallel SDRAM device for systems that require organized 16-bit data paths and high-rate burst transfers.
• High-speed buffering — Suitable for designs needing fast read/write bursts and random column-address capability on each clock cycle.
• Embedded platforms — Provides compact BGA packaging and 3.3 V operation for space-constrained embedded systems requiring synchronous DRAM.

Unique Advantages

• High throughput at 166 MHz: Enables faster data movement and lower access latency (5.4 ns at CL=3) for time-critical operations.
• Flexible burst control: Programmable burst lengths and sequences simplify alignment of memory transfers to system data patterns.
• Banked architecture: Internal quad-bank design allows interleaving to hide row precharge time and improve sustained access efficiency.
• Standard 3.3 V supply: Compatibility with common 3.3 V memory systems simplifies power-supply integration.
• Compact BGA package: 54-ball LFBGA (8 × 13) provides a small footprint for PCB space savings in dense designs.
• Power management features: Auto Refresh and Self Refresh support maintain data integrity while providing power-saving modes.

Why Choose IS42S16160B-6BL?

The IS42S16160B-6BL delivers a compact 256 Mbit synchronous DRAM solution with a 16M × 16 organization, 166 MHz clock capability, and low access latency for systems that require high-throughput parallel memory. Its programmable burst modes, selectable CAS latency, and internal bank interleaving make it a practical choice for designs that need flexible, efficient SDRAM operation.

This device is suited to engineers specifying a 3.3 V parallel SDRAM in a 54-ball LFBGA package and provides refresh and self-refresh mechanisms to support reliable dynamic data retention in standard temperature environments.

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