IS42S16160B-6B

The IS42S16160B-6B is a 256‑Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a quad‑bank, fully synchronous pipeline architecture. It implements a parallel memory interface with LVTTL signaling and supports programmable burst lengths and CAS latencies for flexible, high‑speed memory operations.

Designed for systems requiring a 256‑Mbit parallel SDRAM solution, the device delivers 166 MHz clock operation (CAS‑3 timing), a 5.4 ns access time (CAS‑3), and support for power‑saving refresh modes while operating from a 3.0 V to 3.6 V supply.

Key Features

• Core / Architecture  Quad‑bank SDRAM with fully synchronous, pipelined operation; all inputs and outputs referenced to the rising clock edge.
• Memory Organization  256 Mbit total capacity arranged as 16M × 16 with internal bank interleaving to hide row access/precharge.
• Performance & Timing  Clock frequency up to 166 MHz (for -6 device); programmable CAS latency of 2 or 3 clocks and an access time from clock of 5.4 ns (CAS‑3).
• Burst & Access Modes  Programmable burst lengths (1, 2, 4, 8, full‑page) and burst sequences (sequential/interleave); random column address every clock cycle and burst termination support.
• Refresh & Power Management  Auto Refresh (CBR), Self Refresh, and 8K refresh cycles every 64 ms to maintain data integrity with power‑saving options.
• Interface & Signaling  Parallel memory interface with LVTTL‑compatible inputs and outputs.
• Voltage & Power  Operates from a 3.0 V to 3.6 V supply (VDD and VDDQ specified at 3.3 V).
• Package & Mounting  Available in a 54‑ball LFBGA package (54‑LFBGA, 8 × 13) in x16 configuration; surface‑mount package suited to compact board layouts.
• Operating Range  Commercial operating temperature range: 0 °C to 70 °C (TA).

Typical Applications

• Embedded memory modules  Provides 256‑Mbit parallel SDRAM capacity with programmable burst and CAS options for systems needing organized x16 memory.
• High‑speed buffer memory  Use where synchronous, pipelined transfers and up to 166 MHz clocking are required to support burst read/write operations.
• General system DRAM  Suitable for designs that require a 3.0 V–3.6 V powered SDRAM device in a compact 54‑ball LFBGA package.

Unique Advantages

• Flexible timing configuration: Programmable CAS latency (2 or 3) and multiple burst lengths allow tuning for latency and throughput tradeoffs.
• High‑speed synchronous operation: 166 MHz clocking (CAS‑3) and 5.4 ns access time from clock enable fast, predictable data transfers.
• Bank interleaving and burst support: Internal bank architecture and burst sequencing hide precharge time and enable continuous data streams.
• Power management features: Auto Refresh and Self Refresh modes with specified refresh rate (8K cycles/64 ms) help reduce dynamic power during idle periods.
• Compact BGA package: 54‑LFBGA (8×13) implementation offers a small footprint for space‑constrained board designs.
• Industry‑standard voltage: Operates across a 3.0 V–3.6 V supply range with VDD/VDDQ at 3.3 V, matching common system rails.

Why Choose IS42S16160B-6B?

The IS42S16160B-6B delivers a balanced combination of capacity, synchronous pipeline performance, and flexible timing controls in a compact 54‑ball LFBGA package. With programmable burst lengths, CAS latency options, and built‑in refresh and power‑saving modes, it supports a range of design tradeoffs between latency and throughput while operating on standard 3.3 V system rails.

This device is well suited to designers seeking a 256‑Mbit parallel SDRAM solution that offers deterministic synchronous operation, bank interleaving for hidden precharge, and a commercially rated temperature range for general system integration.

If you need pricing or availability for IS42S16160B-6B, request a quote or submit a pricing inquiry to receive further information and lead‑time details.