IS42S16160D-6BLI

The IS42S16160D-6BLI is a 256-Mbit synchronous DRAM (SDRAM) device organized as 16M x 16 with a parallel interface. It uses a pipelined, fully synchronous architecture with all signals referenced to the rising clock edge to support high-speed data transfer.

This SDRAM is suited for systems that require a 256 Mbit parallel memory with programmable burst control, low-latency access, and robust refresh/self-refresh features, and is offered in a compact 54-ball TFBGA package suitable for space-constrained boards.

Key Features

• Memory Organization: 256 Mbit SDRAM organized as 16M × 16 with 4 internal banks to support efficient row/column operations.
• High-Speed Clocking: Supports clock frequencies up to 166 MHz (CAS latency = 3) with access time from clock as low as 5.4 ns.
• Fully Synchronous Pipeline: All inputs and outputs are referenced to the rising clock edge and the device uses a pipeline architecture for high-speed data transfer.
• Programmable Burst and CAS: Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (Sequential/Interleave); CAS latency selectable (2 or 3 clocks).
• Refresh and Self-Refresh: Auto Refresh (CBR) and Self Refresh supported; standard refresh count 8K cycles (datasheet specifies commercial/industrial options of 64 ms and A2 grade 16 ms).
• Interfaces and Signaling: Parallel memory interface with LVTTL signaling.
• Power: Single power supply, 3.3 V ± 0.3 V (documented supply range 3.0 V–3.6 V).
• Package and Mounting: 54-ball TFBGA (54‑TW‑BGA, 8 × 13) package for surface-mount applications.
• Operating Temperature: Specified operating temperature range of −40°C to +85°C (TA).
• Burst and Access Control: Burst read/write and burst read/single write capability with burst termination by burst stop and precharge commands; random column address every clock cycle.

Typical Applications

• System memory for parallel SDRAM interfaces: Provides 256 Mbit of synchronous storage where a parallel SDRAM interface and pipeline access are required.
• High-speed data buffering: Suited for buffering operations that benefit from programmable burst lengths and low CAS latency.
• Industrial electronics: Applicable in systems that require operation across an industrial temperature range (−40°C to +85°C).

Unique Advantages

• Synchronous pipelined architecture: Ensures all signals align to the rising clock edge for predictable, high-speed transfers.
• Flexible performance tuning: Programmable CAS latency and burst options allow designers to balance latency and throughput for target systems.
• Compact BGA footprint: 54-ball TFBGA package reduces PCB area while supporting surface-mount assembly.
• Robust refresh features: Auto and self-refresh support with documented refresh-cycle options simplify power and data retention strategies.
• Wide supply tolerance: Single 3.3 V supply with documented range 3.0 V–3.6 V accommodates typical 3.3 V system rails.
• Industrial temperature support: Device specified to operate from −40°C to +85°C for temperature-critical designs.

Why Choose IS42S16160D-6BLI?

The IS42S16160D-6BLI combines a 256 Mbit SDRAM capacity with a fully synchronous, pipelined architecture and programmable performance controls, making it an appropriate choice for systems that need predictable high-speed parallel memory. Its 16M ×16 organization, low access time, and flexible burst modes let designers tune memory behavior to application requirements.

Offered in a compact 54-ball TFBGA package and specified for operation to −40°C to +85°C, this device is suitable for space-constrained boards and temperature-sensitive environments. The combination of refresh/self-refresh capabilities and standard 3.3 V power simplifies system integration and long-term operation in supported designs.

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