IS42S16160D-6TL

The IS42S16160D-6TL is a 256‑Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture with all signals referenced to the positive clock edge and supports single‑supply operation at 3.3 V ±0.3 V.

Designed for systems that require high‑speed parallel SDRAM memory, the device offers programmable burst control, selectable CAS latency, and built‑in refresh modes to support continuous data throughput and predictable timing behavior. Its TSOP‑II 54‑pin package provides a compact footprint for board‑level memory integration.

Key Features

• Memory Type & Organization  256‑Mbit SDRAM organized as 16M × 16 (4 banks). Volatile DRAM storage for system memory expansion and buffering.
• Clock & Performance  Supports up to 166 MHz clock frequency with programmable CAS latency (2 or 3 clocks). Typical access time from clock is 5.4 ns at CAS‑3.
• Burst & Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh & Self‑Refresh  Supports Auto Refresh (CBR) and Self Refresh. Refresh options include 8K refresh cycles for either 64 ms (commercial/industrial) or 16 ms (A2 grade) per datasheet options.
• Interface & Signaling  LVTTL compatible interface with parallel data bus and standard SDRAM command set (including burst read/write, auto precharge and burst termination).
• Power  Single power supply operation: 3.0 V to 3.6 V (nominal 3.3 V ±0.3 V).
• Package & Temperature  54‑pin TSOP‑II package (0.400", 10.16 mm width). Commercial operating temperature: 0 °C to +70 °C (TA).

Typical Applications

• Parallel memory expansion  Drop‑in SDRAM for systems that require additional parallel DRAM capacity with a 16‑bit data bus.
• High‑throughput buffering  Use where burstable, low‑latency reads/writes and predictable refresh behavior are required for streaming or buffering tasks.
• Embedded system memory  Suitable for embedded designs requiring a compact 54‑TSOP package and standard 3.3 V SDRAM interface.

Unique Advantages

• High‑speed synchronous operation: 166 MHz clock support and 5.4 ns access time (CL=3) enable fast, clock‑aligned data transfers.
• Flexible burst control: Programmable burst length and sequence options simplify implementation of varied data transfer patterns and improve throughput efficiency.
• Standard LVTTL parallel interface: Compatible signaling and command set for straightforward integration into existing parallel memory systems.
• Single 3.3 V supply: Simplifies power rail requirements and system design compared with multi‑volt architectures.
• Compact TSOP‑II footprint: 54‑pin TSOP package (10.16 mm width) reduces board area for assembly in space‑constrained layouts.
• Built‑in refresh management: Auto Refresh and Self Refresh modes with documented refresh timing options to maintain data integrity.

Why Choose IS42S16160D-6TL?

The IS42S16160D-6TL positions itself as a straightforward, high‑performance 256‑Mbit SDRAM option for designs that need a parallel, LVTTL‑interfaced memory with programmable burst control and selectable CAS latency. Its synchronous pipeline architecture and documented timing parameters support predictable, high‑speed data transfer in systems operating from a standard 3.3 V supply.

This device is suitable for engineers and procurement teams looking for compact, board‑level SDRAM in a 54‑TSOP‑II package where consistent timing, refresh control and flexible burst modes are required. The combination of speed, standard interfacing and package density supports reliable integration into a range of memory subsystems.

Request a quote or submit an RFQ for IS42S16160D-6TL to obtain pricing and lead‑time information for your project planning and procurement.