IS42S16160D-75EBL

The IS42S16160D-75EBL is a 256‑Mbit synchronous DRAM device from ISSI (Integrated Silicon Solution Inc.) organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture with internal banking to optimize high‑speed data transfer and hide row access/precharge cycles.

This device targets designs that require compact, parallel SDRAM memory with defined timing options and commercial temperature operation. Key value propositions include support for programmable burst modes, selectable CAS latency, LVTTL signaling, and a 54‑ball TFBGA package for space‑constrained board layouts.

Key Features

• Memory Core  256‑Mbit SDRAM organized as 16M × 16 with internal banks to improve access efficiency and throughput.
• Performance  Designed for a 133 MHz clock rate (‑75E timing) with an access time of 5.5 ns (CAS‑2), and programmable CAS latency options of 2 or 3 clocks to match system timing requirements.
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleave burst sequence modes enable flexible data transfer patterns.
• Refresh and Power Management  Supports Auto Refresh and Self Refresh with 8K refresh cycles (commercial/industrial: 64 ms) to maintain data integrity.
• Interface and Signaling  LVTTL interface with fully synchronous inputs and outputs referenced to the rising clock edge for deterministic timing.
• Supply Voltage  Single power supply: 3.3 V ±0.3 V (listed supply range 3.0 V to 3.6 V) to match common 3.3 V system rails.
• Package and Mounting  54‑TFBGA (54‑TW‑BGA, 8 × 13) package for BGA assembly in compact designs; operating ambient temperature (TA) range: 0 °C to 70 °C.

Typical Applications

• Embedded Systems  Provides parallel SDRAM capacity for embedded platforms requiring 256‑Mbit volatile memory and predictable synchronous timing.
• Consumer Electronics  Used where a compact BGA package and 3.3 V SDRAM interface are required for buffering and working memory in commercial‑temperature products.
• Industrial Control  Offers synchronous burst modes and refresh control suitable for programmable logic or controller designs operating within the specified 0 °C to 70 °C range.

Unique Advantages

• Flexible Timing Options:  Programmable CAS latency (2 or 3) and multiple burst lengths let designers optimize performance versus timing constraints.
• Compact BGA Footprint:  54‑ball TFBGA package (8 × 13) reduces PCB area and supports high‑density board layouts.
• Synchronous, Deterministic Interface:  All signals referenced to the rising clock edge and LVTTL signaling simplify timing analysis and system integration.
• Standard 3.3 V Supply Compatibility:  Operates from 3.0 V to 3.6 V, aligning with common 3.3 V system power rails for straightforward power design.
• Robust Refresh Controls:  Auto Refresh and Self Refresh support with defined 8K refresh cycles help maintain data integrity in typical commercial use cases.

Why Choose IS42S16160D-75EBL?

The IS42S16160D-75EBL delivers a compact, parallel SDRAM solution with programmable burst behavior, selectable CAS latency, and reliable synchronous signaling—features that make it suitable for commercial‑temperature embedded and consumer applications requiring 256‑Mbit volatile memory. Its 54‑TFBGA package and standard 3.3 V supply range enable integration into space‑constrained designs while maintaining conventional system power architecture.

Designers seeking deterministic timing, flexible performance tuning, and industry‑standard refresh and interface capabilities will find the IS42S16160D-75EBL appropriate for projects where synchronous parallel DRAM is required and commercial temperature operation is acceptable.

If you would like to evaluate the IS42S16160D-75EBL for your design, request a quote or submit an RFQ to receive pricing and availability information.