IS42S16160D-75EBLI

The IS42S16160D-75EBLI is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface. It implements fully synchronous SDRAM architecture with programmable burst modes and CAS latency options for flexible timing and predictable throughput.

This device targets systems that require mid-density, parallel SDRAM memory in a compact BGA package, offering industrial operating temperature support and standard 3.3 V power operation for embedded and industrial designs.

Key Features

• Memory Core: 256 Mbit SDRAM organized as 16M × 16 with internal bank architecture to hide row access and precharge operations.
• Performance: Supports a clock frequency up to 133 MHz (–75E timing) with access time as low as 5.5 ns (CAS latency = 2) for time-deterministic read/write operations.
• Programmable Burst & Timing: Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave) plus selectable CAS latency (2 or 3) to match system timing needs.
• Refresh & Retention: Auto-Refresh and Self-Refresh supported; 8K refresh cycles with selectable refresh periods (16 ms or 64 ms depending on grade).
• Interface & Signaling: Fully synchronous operation with signals referenced to the positive clock edge and LVTTL-compatible interface.
• Power: Single power supply operation at 3.3 V ±0.3 V (specified range 3.0 V to 3.6 V).
• Package & Mounting: 54-TFBGA (54-ball BGA) in a compact footprint (supplier package 54-TW-BGA, 8×13 mm), suitable for space-constrained board layouts.
• Operating Temperature: Industrial temperature range specified from −40°C to +85°C (TA).

Typical Applications

• Embedded Systems: Acts as system memory in embedded platforms that require a 256 Mbit parallel SDRAM with flexible burst and timing options.
• Industrial Control: Provides volatile data buffering and working memory for industrial controllers and instrumentation operating across −40°C to +85°C.
• Networking and Communications Equipment: Used for packet buffering and temporary storage where synchronous, parallel DRAM is required.

Unique Advantages

• Flexible Timing Configuration: Programmable CAS latency (2 or 3) and burst options allow designers to tune performance to system clock and latency requirements.
• Predictable Synchronous Interface: Fully synchronous operation with LVTTL signaling simplifies timing analysis and integration with synchronous memory controllers.
• Compact BGA Package: 54-ball TFBGA (8×13 mm) enables dense board layouts while providing the parallel data width of a 16-bit device.
• Industrial Temperature Support: Specified operation from −40°C to +85°C for deployment in temperature-challenging environments.
• Self-Refresh and Auto-Refresh: Built-in refresh modes (including 8K refresh cycles) support retention during low-power or paused operation modes.
• Standard 3.3 V Supply: Single-supply 3.3 V ±0.3 V operation simplifies power supply design for conventional SDRAM systems.

Why Choose IS42S16160D-75EBLI?

The IS42S16160D-75EBLI delivers a balance of mid-density capacity, synchronous SDRAM performance, and flexible timing features in a compact BGA package. Its programmable burst modes, selectable CAS latency, and support for self-refresh and auto-refresh make it suitable for designs that require predictable synchronous memory behavior and configurable throughput.

This device is well suited for embedded and industrial applications that need a 256 Mbit parallel SDRAM solution with industrial temperature capability and standard 3.3 V power operation. Its compact footprint and 16-bit data organization provide straightforward integration into space-constrained systems requiring parallel DRAM.

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