IS42S16160D-75ETL-TR

The IS42S16160D-75ETL-TR is a 256‑Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements a pipelined, fully synchronous architecture with internal banks and programmable burst modes for efficient burst read/write operations.

This device targets systems that require a compact 54‑pin TSOP II package and a 3.0–3.6 V single power supply, providing predictable timing and refresh behavior for embedded and board‑level memory expansion.

Key Features

• Memory Core – 256 Mbit capacity organized as 16M × 16 with internal banking to hide row access and precharge latency.
• Synchronous Pipeline Architecture – Fully synchronous operation with all signals referenced to the rising clock edge to support deterministic timing.
• Performance – Specified for 133 MHz clock operation and an access time of 5.5 ns (–75 speed grade, CAS‑2); programmable CAS latency options of 2 and 3 clocks.
• Burst and Sequencing – Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave) to optimize block transfers.
• Refresh and Power Management – Auto‑Refresh and Self‑Refresh support; 8K refresh cycles with selectable intervals (16 ms for A2 grade, 64 ms for commercial/A1/industrial per datasheet options).
• Interface and Signaling – LVTTL‑compatible interface and parallel memory interface suitable for standard SDRAM controller implementations.
• Power – Single supply range: 3.0 V to 3.6 V (3.3 V ±0.3 V as specified in datasheet).
• Package and Temperature – 54‑pin TSOP II (0.400", 10.16 mm width) package; commercial operating temperature 0°C to +70°C (TA).

Typical Applications

• Embedded Systems – External SDRAM for embedded controllers and boards that require mid‑density parallel memory in a TSOP II footprint.
• Consumer Electronics – Frame buffering and temporary data storage where a 256‑Mbit SDRAM with burst capability and LVTTL interface is needed.
• Networking and Communications – Packet buffering or intermediate data storage using the device’s internal banking and programmable burst modes.
• Industrial Control – Systems operating within 0°C to +70°C that require reliable synchronous DRAM with auto‑ and self‑refresh features.

Unique Advantages

• 256‑Mbit Density in a Compact Package: High memory capacity combined with a 54‑pin TSOP II footprint reduces board area compared with multiple smaller devices.
• Flexible Burst Control: Programmable burst lengths and sequences enable efficient block transfers and adaptable memory throughput for different access patterns.
• Predictable Timing: Fully synchronous, pipelined operation with selectable CAS latency (2 or 3) provides deterministic timing for system design.
• Single Supply Simplicity: Operates from a single 3.0–3.6 V supply (3.3 V class), simplifying power rail design.
• Built‑in Refresh Modes: Auto‑Refresh and Self‑Refresh support with documented refresh cycle options simplifies memory maintenance in standby or low‑activity modes.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S16160D-75ETL-TR delivers a 256‑Mbit synchronous DRAM solution with a 16M × 16 organization, programmable burst behavior, and a parallel LVTTL interface in a 54‑pin TSOP II package. Its specification for 133 MHz operation (–75E grade) and 5.5 ns access time (CAS‑2) supports designs that demand predictable synchronous memory timing and efficient block transfers.

This part is suited for engineers specifying mid‑density external DRAM where package density, single‑supply operation, and standard SDRAM features (auto/self refresh, programmable CAS/burst) are key selection criteria. It provides a straightforward, documented option for compact board designs requiring parallel SDRAM connectivity.

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