IS42S16160D-7BI

The IS42S16160D-7BI is a 256-Mbit synchronous DRAM device organized as 16M × 16 with internal bank architecture to support high-speed, fully synchronous memory operations. It implements pipeline operation with all signals referenced to the rising edge of the clock and a parallel LVTTL interface.

Designed for systems requiring a 3.3 V single-supply parallel SDRAM in a compact 54-ball TFBGA package, this device offers programmable burst modes, on-chip refresh management and a wide operating temperature range for robust system deployment.

Key Features

• Memory Type and Organization — 256 Mbit DRAM organized as 16M × 16, with internal bank architecture to hide row access and precharge operations.
• Synchronous SDRAM — Fully synchronous operation with all signals referenced to the positive clock edge and LVTTL interface.
• Speed Grades & Timing — Specified clock frequency up to 143 MHz (‑7 grade) with selectable CAS latency (2 or 3 cycles) and an access time of 5.4 ns (CAS Latency = 3).
• Programmable Burst Modes — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence options (sequential/interleave); supports burst read/write and burst read/single write operations.
• Refresh and Self-Refresh — Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with timing options (e.g., 8K/16 ms for A2 grade or 8K/64 ms for commercial/industrial/A1 grade as specified).
• Power Supply — Single power supply operation: 3.0 V to 3.6 V (datasheet specified 3.3 V ±0.3 V).
• Package — 54-TFBGA (54-ball BGA, 8 × 13) compact package suitable for board-space constrained designs.
• Operating Temperature — Rated for −40 °C to +85 °C (TA).

Unique Advantages

• High-speed synchronous operation: 143 MHz clock support and low access times (5.4 ns at CL=3) enable fast data throughput for time-critical memory operations.
• Flexible burst control: Programmable burst lengths and sequence modes simplify memory controller integration and optimize block transfers.
• Integrated refresh management: Auto and self-refresh support with defined 8K refresh cycles reduces external refresh handling and eases system design.
• Single-supply convenience: 3.0–3.6 V operation (3.3 V nominal) aligns with common system power rails for straightforward power design.
• Compact BGA footprint: 54-ball TFBGA (8×13) provides a space-efficient package while maintaining a parallel SDRAM interface.
• Wide operating range: −40 °C to +85 °C rating supports deployment in thermally demanding environments within the specified range.

Why Choose IS42S16160D-7BI?

The IS42S16160D-7BI delivers a well-specified 256 Mbit parallel SDRAM solution combining synchronous, pipelined operation with programmable burst modes and on-chip refresh features. Its 3.3 V single-supply operation and compact 54-TFBGA package make it suitable for designs that require a fast, space-efficient external memory solution.

This device is appropriate for engineers and procurement teams seeking a verifiable, specification-driven SDRAM component that provides controlled timing options (CAS latency and burst control), integrated refresh capabilities, and operation across a broad temperature range for reliable system behavior.

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