IS42S16160D-7BLI

The IS42S16160D-7BLI is a 256‑Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface and four internal banks. It implements a fully synchronous pipeline architecture to support high-speed data transfer with a rated clock frequency of 143 MHz and an access time of 5.4 ns (CAS latency = 3).

This device is powered from a single 3.3 V supply range (3.0–3.6 V), supports programmable burst lengths and sequences, auto and self refresh modes, and is supplied in a 54‑TFBGA (54‑ball BGA, 8×13) package with an operating temperature range of −40°C to +85°C (TA).

Key Features

• Core / Architecture Fully synchronous SDRAM with inputs and outputs referenced to the rising clock edge; pipeline architecture and internal bank structure for hiding row access/precharge.
• Memory Organization 256 Mbit density organized as 16M × 16 with 4 internal banks.
• Timing Performance Rated clock frequency 143 MHz (‑7 speed grade) with access time 5.4 ns at CAS latency = 3; programmable CAS latency of 2 or 3 clocks.
• Burst and Sequencing Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations with burst termination options.
• Refresh and Low‑Power Modes Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with timing options (16 ms for A2 grade or 64 ms for commercial/industrial/A1 grade as specified in the datasheet).
• Interface and Voltage LVTTL interface compatible signaling; single power supply 3.3 V ±0.3 V (3.0–3.6 V).
• Package and Temperature 54‑TFBGA (54‑ball BGA, 8×13) package; operating temperature range −40°C to +85°C (TA).

Unique Advantages

• High memory density: 256 Mbit capacity in a single 16M × 16 device simplifies board-level memory planning.
• Synchronous pipeline performance: Fully synchronous design with 143 MHz operation and 5.4 ns access supports high‑speed data transfer requirements.
• Flexible burst control: Programmable burst lengths and sequences enable efficient block transfers and interface optimization.
• Robust refresh options: Auto and self refresh modes plus selectable refresh timing (per datasheet grades) support reliable retention in varied duty cycles.
• Compact BGA footprint: 54‑ball TFBGA (8×13) package offers a small board area for high-density memory implementations.
• Wide operating voltage and temperature: 3.0–3.6 V supply range and −40°C to +85°C operating range provide design margin for many system environments.

Why Choose IS42S16160D-7BLI?

The IS42S16160D-7BLI positions itself as a high-density, high-performance synchronous DRAM option for designs that require a 256‑Mbit parallel memory with programmable timing and burst functionality. Its fully synchronous pipeline architecture, internal bank structure, and flexible refresh modes deliver deterministic timing and efficient burst transfers tied directly to the device's documented clock and access specifications.

This part is appropriate for system designs needing a compact BGA memory solution with a defined operating voltage window and industrial temperature support. The device’s explicit timing, refresh, and interface features make it suitable for integration where documented, verifiable memory behavior is required.

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