IS42S16160D-7BL-TR

The IS42S16160D-7BL-TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous, pipelined architecture with internal bank management to optimize row access and precharge operations.

This device targets designs that require compact, high-speed parallel SDRAM memory with defined timing options and a 54-ball TFBGA package, offering deterministic synchronous timing and programmable burst/latency features for system memory and high-speed buffering applications.

Key Features

• Memory Core 
  256 Mbit SDRAM organized as 16M × 16 with four internal banks for improved row access efficiency.
• Performance 
  Clock frequency of 143 MHz (–7 speed grade) and access time of 5.4 ns (CAS latency = 3) for high-rate synchronous operation.
• Programmable Timing and Burst 
  Programmable CAS latency (2 or 3 clocks) and programmable burst length (1, 2, 4, 8, full page) with sequential or interleaved burst sequence options.
• Refresh and Self-Refresh 
  Auto Refresh (CBR) and Self Refresh support with 8K refresh cycles (commercial/industrial A1: 64 ms; A2: 16 ms as specified in datasheet options).
• Interface 
  LVTTL-compatible parallel interface with all signals referenced to the positive clock edge (fully synchronous operation).
• Power 
  Single power supply operation; voltage supply range listed as 3.0 V to 3.6 V (datasheet notes 3.3 V ±0.3 V).
• Package & Temperature 
  54-ball TFBGA (54-TW-BGA, 8 × 13) package; commercial operating temperature range 0 °C to +70 °C (TA).

Typical Applications

• System Memory (Parallel SDRAM) 
  Use as parallel SDRAM system memory where a 16M × 16 organization and synchronous timing are required.
• High-Speed Data Buffering 
  Suitable for designs that require deterministic, high-rate read/write bursts using programmable burst lengths and CAS latency.
• Compact Board-Level Memory 
  54-ball TFBGA package enables compact PCB layouts for space-constrained assemblies needing 256 Mbit parallel DRAM.

Unique Advantages

• Deterministic synchronous operation: Positive-edge referenced clocking and fully synchronous I/O simplify timing analysis and system integration.
• Flexible performance tuning: Programmable CAS latency (2 or 3 clocks) and multiple burst length/sequence options let designers balance latency and throughput.
• Banked architecture: Internal banks hide row access/precharge latency to improve effective throughput for burst operations.
• Standard 3.3 V-class supply: Single-supply operation (3.0 V–3.6 V) aligns with common 3.3 V system rails.
• Compact BGA footprint: 54-ball TFBGA (8 × 13) package supports higher board density and placement flexibility.
• Commercial temperature rating: Specified operating range of 0 °C to +70 °C for typical commercial applications.

Why Choose IS42S16160D-7BL-TR?

The IS42S16160D-7BL-TR provides a proven synchronous DRAM building block for designs that need a 256 Mbit parallel memory with defined timing control, programmable burst behavior, and banked architecture for efficient row management. Its 143 MHz (–7) speed grade, programmable CAS latency, and compact 54-ball TFBGA package make it suitable for compact systems requiring deterministic, high-rate SDRAM operation.

This device is appropriate for engineers specifying parallel SDRAM where controlled timing, refresh modes, and a 3.0 V–3.6 V power domain are part of the system requirements. The IS42S16160D-7BL-TR combines timing flexibility, standard power supply compatibility, and a small BGA footprint to support robust memory subsystems in commercial-temperature applications.

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