IS42S16160D-75EBL-TR

The IS42S16160D-75EBL-TR is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M × 16 with a fully synchronous, pipelined architecture and internal bank structure. It provides a parallel memory interface and is optimized for systems requiring predictable, clock-referenced DRAM access.

Designed for commercial-temperature applications, the device operates from a single 3.0–3.6 V supply (3.3 V ±0.3 V) and supports high-speed operation up to 133 MHz (–75E timing option), making it suitable for embedded and system memory needs where defined timing, burst transfer capability, and refresh control are required.

Key Features

• Memory Core — 256 Mbit SDRAM organized as 16M × 16 with internal bank architecture for hidden row access/precharge.
• Performance — Supports clock operation to 133 MHz for the –75E timing grade with an access time down to 5.5 ns (CAS latency = 2) and programmable CAS latency (2 or 3 clocks).
• Burst and Transfer Control — Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential or interleave); burst read/write and burst read/single write operations with burst termination options.
• Refresh and Self-Reliability — Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with timing options of every 16 ms (A2 grade) or 64 ms (commercial/A1 grades).
• Interface and Logic — Fully synchronous LVTTL-referenced interface with random column address capability every clock cycle and standard SDRAM command set.
• Power — Single power supply: 3.0–3.6 V (3.3 V ±0.3 V).
• Package and Temperature — 54-ball TFBGA package (54-TW-BGA, 8 × 13) and commercial operating temperature range 0 °C to +70 °C (TA).

Unique Advantages

• Clock-referenced, pipelined SDRAM: Deterministic, synchronous operation tied to the rising clock edge simplifies timing analysis and system integration.
• Flexible burst modes: Programmable burst length and sequence allow designers to tune throughput and latency for different access patterns.
• Robust refresh options: Auto and self refresh plus selectable refresh intervals (8K/16 ms or 8K/64 ms) support a range of reliability and power profiles.
• Compact BGA footprint: 54-TFBGA (8 × 13) package provides a small board area for high-density memory implementations.
• Standard voltage compatibility: 3.0–3.6 V single-supply operation matches common 3.3 V system rails for straightforward power integration.

Why Choose IS42S16160D-75EBL-TR?

The IS42S16160D-75EBL-TR is positioned as a straightforward, clocked SDRAM solution for designs that require a 256 Mbit parallel memory with predictable timing, programmable burst behavior, and standard refresh management. Its combination of CL options, 133 MHz –75E timing support, and self-refresh/auto-refresh modes provide designers with timing flexibility and reliability control.

This device is well suited to designs that need a compact BGA memory package with commercial temperature range and standard 3.3 V class power. Its feature set supports scalable use in embedded systems and other applications requiring synchronous, burst-capable DRAM with configurable timing and refresh characteristics.

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