IS42S16160D-75ETL

The IS42S16160D-75ETL is a 256-Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements pipeline architecture and fully synchronous operation with all inputs and outputs referenced to the rising edge of the clock.

Designed for systems requiring high-speed, fully synchronous DRAM operation, this device delivers programmable burst modes, selectable CAS latency, and standard SDRAM refresh options while operating from a single 3.3V supply range.

Key Features

• Memory Core 
  256 Mbit SDRAM organized as 16M × 16 with internal bank architecture for hiding row access/precharge.
• Synchronous Pipeline Architecture 
  Fully synchronous operation with all signals referenced to the rising clock edge to support predictable timing in synchronous systems.
• Performance 
  Clock frequency up to 133 MHz (–75E device) with an access time from clock as low as 5.5 ns (CAS latency = 2, –75E).
• Programmable Burst and Latency 
  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave). CAS latency programmable to 2 or 3 clocks.
• Refresh and Power Management 
  Supports Auto Refresh (CBR) and Self Refresh. Refresh count options include 8K cycles per 16 ms or 64 ms depending on grade.
• Interface and Signaling 
  LVTTL-compatible interface signals and random column addressing every clock cycle.
• Supply Voltage 
  Single power supply: 3.3V ±0.3V (documented operating range 3.0–3.6V).
• Package and Temperature 
  54-pin TSOP II (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• Synchronous system memory 
  Used where a 256-Mbit, fully synchronous DRAM with programmable burst control and selectable CAS latency is required.
• High-speed buffering 
  Suitable for applications requiring pipeline transfers and predictable clock-referenced timing.
• Embedded DRAM subsystems 
  Fits designs that need a parallel SDRAM device in a compact 54-TSOP II package with standard refresh modes.

Unique Advantages

• Predictable, clock-referenced operation 
  Fully synchronous design with pipeline architecture ensures signals and data transfers are referenced to the rising clock edge.
• Configurable performance 
  Programmable CAS latency and burst options allow trade-offs between latency and throughput to match system timing requirements.
• Compact package 
  54-pin TSOP II footprint (10.16 mm width) provides a space-efficient DRAM solution for board-level designs.
• Standard single-supply operation 
  Operates from a single 3.3V supply (3.0–3.6V), simplifying power rail requirements.
• Flexible refresh modes 
  Supports Auto Refresh and Self Refresh with documented 8K refresh counts to accommodate different grade-specific retention intervals.

Why Choose IS42S16160D-75ETL?

The IS42S16160D-75ETL provides a straightforward, fully synchronous 256-Mbit SDRAM option with pipeline architecture, programmable burst/latency settings, and a compact TSOP II package. Its documented 133 MHz clock support (–75E) and 5.5 ns access timing at CAS latency = 2 make it suitable for designs requiring predictable, clocked memory behavior.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM for embedded or system memory applications that need a single-supply 3.3V device with standard refresh and self-refresh capability and a commercial operating temperature range.

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