IS42S16160D-6BL-TR

The IS42S16160D-6BL-TR is a 256‑Mbit synchronous DRAM (SDRAM) device organized as 16M × 16 with a parallel memory interface. It implements a pipelined, fully synchronous architecture with all signals referenced to the rising edge of the clock.

Designed for commercial-temperature systems (0°C to 70°C), the device offers a 166 MHz clock option, LVTTL signalling and a single 3.3 V ±0.3 V supply window (listed as 3.0 V to 3.6 V), making it suitable for board-level SDRAM memory applications that require programmable burst control and selectable CAS latency.

Key Features

• Memory Core — 256 Mbit SDRAM organized as 16M × 16 and implemented with internal bank architecture to help hide row access and precharge latency.
• Performance — Supports a clock frequency up to 166 MHz with an access time from clock of 5.4 ns (CAS latency = 3).
• Interface and Timing — Parallel memory interface with LVTTL signalling. Programmable burst length (1, 2, 4, 8, full page), programmable burst sequence (Sequential/Interleave) and selectable CAS latency (2 or 3 clocks).
• Power — Single power supply operation listed at 3.0 V to 3.6 V (typical 3.3 V ±0.3 V).
• Refresh and Self‑Maintenance — Supports Auto Refresh (CBR) and Self Refresh; commercial refresh rate is 8K refresh cycles every 64 ms.
• Burst and Access Modes — Burst read/write and burst read/single write operations with random column address capability every clock cycle; burst termination via burst stop or precharge command.
• Package and Temperature — 54‑TFBGA (54‑TW‑BGA, 8 × 13 footprint) package; operating temperature 0°C to 70°C (TA).

Typical Applications

• Commercial embedded systems — Board-level SDRAM for commercial-temperature embedded designs requiring synchronous parallel memory.
• Memory expansion on PCBs — PCB-level memory buffers and expansion where a 16M × 16 SDRAM organization is required.
• Systems requiring programmable burst control — Applications that benefit from selectable burst length and burst sequence for optimized data transfer patterns.

Unique Advantages

• Deterministic synchronous timing — Fully synchronous design with all signals referenced to the rising clock edge enables predictable timing at the stated clock frequencies.
• Selectable performance points — Programmable CAS latency (2 or 3) and multiple burst length options let designers tune latency and throughput.
• Single‑supply operation — Operates across a 3.0 V to 3.6 V range for straightforward power rail integration.
• Built‑in refresh management — Auto Refresh and Self Refresh modes with commercial-grade 8K/64 ms refresh support reduce external refresh handling.
• Compact BGA footprint — 54‑TFBGA package (54‑TW‑BGA, 8×13) minimizes PCB area for board-level memory implementations.
• Fast access timing — Access time from clock as low as 5.4 ns (CAS = 3) for low-latency read operations at the specified clock rate.

Why Choose IS42S16160D-6BL-TR?

The IS42S16160D-6BL-TR provides a straightforward, commercial-temperature SDRAM option with a 16M × 16 organization, programmable timing and burst flexibility, and a compact 54‑TFBGA package. Its synchronous, pipelined architecture and support for 166 MHz operation deliver the timing control and throughput characteristics needed for many board-level memory functions.

Choose this device for designs that require a 256‑Mbit parallel SDRAM with selectable CAS latency and burst modes, single‑supply 3.3 V operation, and standard commercial temperature range. The device’s refresh and self‑refresh capabilities simplify system-level refresh management and integration.

Request a quote or submit an RFQ to obtain pricing and availability information for the IS42S16160D-6BL-TR.