IS42S16160G-7TLI-TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,169 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S16160G-7TLI-TR – IC DRAM 256MBIT PAR 54TSOP II
The IS42S16160G-7TLI-TR is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with four internal banks and a fully synchronous, pipeline architecture. It provides a parallel LVTTL memory interface and programmable burst operation for predictable, high-speed data transfers.
Designed for commercial and industrial systems, the device operates from a single 3.3 V supply (3.0–3.6 V) and supports an operating temperature range of –40°C to +85°C, offering configurable timing and a compact 54-pin TSOP-II package for space-constrained boards.
Key Features
- Memory Core 256 Mbit SDRAM organized as 4M × 16 × 4 banks, delivering parallel memory capacity in a single device.
- Performance -7 speed grade supports a clock frequency of 143 MHz with an access time of 5.4 ns and programmable CAS latency (2 or 3 clocks) for timing flexibility.
- Interface & Burst Fully synchronous operation with LVTTL signaling; programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) to adapt throughput to system needs.
- Power Single power supply: 3.3 V nominal (3.0–3.6 V) simplifies power-rail design.
- Refresh & Self-Maintenance Supports Auto Refresh (CBR) and Self Refresh; 8K refresh cycles with standard commercial/industrial refresh timing (64 ms) as documented in the device specification.
- System Features Internal bank architecture hides row access/precharge latency and supports burst termination via burst stop and precharge commands for efficient memory management.
- Package & Temperature 54-pin TSOP-II package (0.400", 10.16 mm width) and an operating temperature range of –40°C to +85°C (TA) for industrial applications.
Typical Applications
- Industrial Embedded Systems External SDRAM for controllers and embedded platforms that require 256 Mbit of parallel memory and industrial temperature operation.
- High-speed Data Buffers Temporary storage and buffering where synchronous pipeline architecture and programmable burst modes optimize throughput and latency.
- Networking & Communication Equipment Parallel SDRAM option for packet buffering and transient data storage where deterministic, clock-referenced timing is needed.
- Commercial Electronics External memory for designs operating in commercial temperature ranges that require configurable timing and a compact footprint.
Unique Advantages
- Flexible timing configuration: Programmable CAS latency and burst parameters let designers tune performance to match system timing and access patterns.
- Predictable synchronous operation: All signals referenced to the positive clock edge and pipeline architecture provide deterministic timing for high-speed transfers.
- Industrial temperature capability: Specified operation from –40°C to +85°C supports deployment in temperature-challenged environments.
- Compact package: 54-pin TSOP-II footprint (0.400", 10.16 mm) minimizes board area for space-constrained designs.
- Single-supply simplicity: 3.3 V nominal operation (3.0–3.6 V) reduces power-rail complexity in system designs.
Why Choose IS42S16160G-7TLI-TR?
The IS42S16160G-7TLI-TR combines a 256 Mbit SDRAM core with a fully synchronous, pipeline architecture and programmable timing options to deliver predictable, high-speed parallel memory for commercial and industrial designs. Its LVTTL interface, burst programming, and internal bank structure provide design flexibility for a range of buffering and external-memory applications.
With a single 3.3 V supply and a compact 54-pin TSOP-II package rated to –40°C to +85°C, this device is suited to systems that require reliable, configurable SDRAM capacity while conserving board space and simplifying power design.
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