IS42S16160G-7TLI-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,169 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160G-7TLI-TR – IC DRAM 256MBIT PAR 54TSOP II

The IS42S16160G-7TLI-TR is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with four internal banks and a fully synchronous, pipeline architecture. It provides a parallel LVTTL memory interface and programmable burst operation for predictable, high-speed data transfers.

Designed for commercial and industrial systems, the device operates from a single 3.3 V supply (3.0–3.6 V) and supports an operating temperature range of –40°C to +85°C, offering configurable timing and a compact 54-pin TSOP-II package for space-constrained boards.

Key Features

  • Memory Core  256 Mbit SDRAM organized as 4M × 16 × 4 banks, delivering parallel memory capacity in a single device.
  • Performance  -7 speed grade supports a clock frequency of 143 MHz with an access time of 5.4 ns and programmable CAS latency (2 or 3 clocks) for timing flexibility.
  • Interface & Burst  Fully synchronous operation with LVTTL signaling; programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) to adapt throughput to system needs.
  • Power  Single power supply: 3.3 V nominal (3.0–3.6 V) simplifies power-rail design.
  • Refresh & Self-Maintenance  Supports Auto Refresh (CBR) and Self Refresh; 8K refresh cycles with standard commercial/industrial refresh timing (64 ms) as documented in the device specification.
  • System Features  Internal bank architecture hides row access/precharge latency and supports burst termination via burst stop and precharge commands for efficient memory management.
  • Package & Temperature  54-pin TSOP-II package (0.400", 10.16 mm width) and an operating temperature range of –40°C to +85°C (TA) for industrial applications.

Typical Applications

  • Industrial Embedded Systems  External SDRAM for controllers and embedded platforms that require 256 Mbit of parallel memory and industrial temperature operation.
  • High-speed Data Buffers  Temporary storage and buffering where synchronous pipeline architecture and programmable burst modes optimize throughput and latency.
  • Networking & Communication Equipment  Parallel SDRAM option for packet buffering and transient data storage where deterministic, clock-referenced timing is needed.
  • Commercial Electronics  External memory for designs operating in commercial temperature ranges that require configurable timing and a compact footprint.

Unique Advantages

  • Flexible timing configuration: Programmable CAS latency and burst parameters let designers tune performance to match system timing and access patterns.
  • Predictable synchronous operation: All signals referenced to the positive clock edge and pipeline architecture provide deterministic timing for high-speed transfers.
  • Industrial temperature capability: Specified operation from –40°C to +85°C supports deployment in temperature-challenged environments.
  • Compact package: 54-pin TSOP-II footprint (0.400", 10.16 mm) minimizes board area for space-constrained designs.
  • Single-supply simplicity: 3.3 V nominal operation (3.0–3.6 V) reduces power-rail complexity in system designs.

Why Choose IS42S16160G-7TLI-TR?

The IS42S16160G-7TLI-TR combines a 256 Mbit SDRAM core with a fully synchronous, pipeline architecture and programmable timing options to deliver predictable, high-speed parallel memory for commercial and industrial designs. Its LVTTL interface, burst programming, and internal bank structure provide design flexibility for a range of buffering and external-memory applications.

With a single 3.3 V supply and a compact 54-pin TSOP-II package rated to –40°C to +85°C, this device is suited to systems that require reliable, configurable SDRAM capacity while conserving board space and simplifying power design.

Request a quote or contact sales to discuss availability, lead times, and pricing for IS42S16160G-7TLI-TR.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay
    Featured Products
    Latest News
    keyboard_arrow_up