IS42S16160J-6BLI

The IS42S16160J-6BLI is a 256 Mbit volatile SDRAM organized as 16M x 16 with a parallel memory interface. It delivers synchronous DRAM performance in a compact 54‑TFBGA (8×8) package for designs that require dense, parallel-access memory.

With a clock frequency of 166 MHz, 5.4 ns access time, and a supply voltage range of 3.0–3.6 V, this device is intended for systems that need predictable SDRAM timing and wide operating temperature capability.

Key Features

• Memory Type and Capacity 256 Mbit volatile SDRAM organized as 16M × 16, providing parallel data width and density for system memory needs.
• Performance Supports a 166 MHz clock frequency with a typical access time of 5.4 ns for synchronous memory operation.
• Interface & Organization Parallel memory interface with 16‑bit data organization suitable for parallel bus systems and wide data transfers.
• Power Operates from a 3.0–3.6 V supply range to match common 3 V SDRAM power rails.
• Package 54‑TFBGA (8×8) supplier device package for compact board footprint and BGA assembly.
• Operating Temperature Ambient temperature range of −40 °C to 85 °C (TA) for use across typical commercial and industrial temperature environments.

Typical Applications

• Embedded systems — Provides parallel SDRAM capacity and timing for system memory in embedded controllers and processors that use external DRAM.
• Networking and communications — Serves as synchronous parallel memory for buffering and packet handling in network devices that require deterministic DRAM timing.
• Consumer and industrial electronics — Useful where a 256 Mbit parallel SDRAM in a compact 54‑TFBGA package is needed within the device memory subsystem.

Unique Advantages

• High-density parallel memory: 16M × 16 organization delivers 256 Mbit capacity with a wide data bus for efficient parallel transfers.
• Synchronous performance: 166 MHz clocking and 5.4 ns access time provide defined timing characteristics for synchronous system designs.
• Wide supply compatibility: 3.0–3.6 V supply range fits common 3 V system rails for straightforward power integration.
• Compact BGA package: 54‑TFBGA (8×8) minimizes PCB footprint while supporting BGA assembly processes.
• Extended ambient range: −40 °C to 85 °C operation supports deployments across a broad temperature envelope.

Why Choose IS42S16160J-6BLI?

The IS42S16160J-6BLI positions itself as a straightforward, high-density SDRAM option for designs that require a 16‑bit parallel memory interface, deterministic synchronous timing, and a compact BGA footprint. Its combination of 256 Mbit capacity, 166 MHz clocking, and extended ambient temperature range makes it suitable for systems needing reliable parallel DRAM storage within standard 3 V power domains.

Designers and procurement teams seeking a known-density SDRAM with clear electrical and thermal parameters will find the IS42S16160J-6BLI appropriate for integration into embedded, networking, and industrial electronic applications where parallel SDRAM is required.

Request a quote or submit a sales inquiry to obtain pricing, availability, and additional procurement information for the IS42S16160J-6BLI.