IS42S16160J-6BL

The IS42S16160J-6BL is a volatile SDRAM device providing 256 Mbit of parallel memory organized as 16M × 16. It implements a parallel SDRAM architecture with a 54‑TFBGA (8×8) package footprint.

Designed for systems requiring on-board parallel DRAM, the device operates from a 3.0 V to 3.6 V supply and is specified for ambient operating temperatures from 0°C to 70°C.

Key Features

• Memory Core  256 Mbit DRAM organized as 16M × 16, providing a defined density and data bus width for parallel memory designs.
• Technology  SDRAM architecture supporting synchronous parallel operation as specified in the product data.
• Performance  Supports a clock frequency of 166 MHz with an access time of 5.4 ns as listed in the specifications.
• Interface & Organization  Parallel memory interface with 16-bit organization suitable for designs requiring parallel DRAM connectivity.
• Power  Operates from a 3.0 V to 3.6 V supply range.
• Package & Temperature  Supplied in a 54‑TFBGA (8×8) package and specified for an ambient operating temperature range of 0°C to 70°C (TA).

Unique Advantages

• Defined 256 Mbit density: Provides a clear 16M × 16 organization for predictable memory budgeting in system designs.
• Parallel SDRAM interface: Matches designs that require synchronous parallel DRAM connectivity and data-width alignment.
• Documented timing and clock: 166 MHz clock frequency with a 5.4 ns access time gives explicit timing parameters for integration and timing analysis.
• Standard 3.0–3.6 V supply range: Compatible with common 3.3 V system power rails as defined in the specifications.
• Compact 54‑TFBGA (8×8) package: Available in a ball-grid array package format suitable for space-conscious PCB layouts.
• Specified operating temperature: Rated for 0°C to 70°C (TA), enabling use in systems within this ambient range.

Why Choose IS42S16160J-6BL?

The IS42S16160J-6BL offers a defined 256 Mbit SDRAM option with explicit organization, timing, voltage and temperature specifications suited for systems that require parallel DRAM memory in a compact BGA package. Its documented clock and access time simplify timing analysis and integration into synchronous parallel memory subsystems.

This device is appropriate for designs that need a 16‑bit parallel SDRAM with a 54‑TFBGA footprint and 3.0–3.6 V operation, providing clear, verifiable specifications for procurement and system validation.

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