IS42S16160J-6TLI

The IS42S16160J-6TLI is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It delivers 166 MHz clock operation and a 5.4 ns access time in a compact 54‑pin TSOP II package, supporting systems that require mid-density SDRAM memory in a small footprint.

With a 3.0 V to 3.6 V supply range and an operating temperature from −40 °C to 85 °C, this device is intended for designs that need standard SDRAM performance and a wide thermal operating window. Manufactured by Integrated Silicon Solution Inc., the device suits applications where parallel SDRAM is specified and a 54‑TSOP II package is required.

Key Features

• Memory Core 256 Mbit SDRAM organized as 16M × 16, providing a straightforward parallel memory architecture for system DRAM needs.
• Performance 166 MHz clock frequency with a 5.4 ns access time, enabling typical SDRAM read/write timing for systems designed around those timing requirements.
• Interface Parallel memory interface compatible with designs that implement standard SDRAM parallel signaling and control.
• Power Operates from a 3.0 V to 3.6 V supply range, supporting designs that use standard 3.3 V power rails.
• Package & Mounting 54‑TSOP II (0.400", 10.16 mm width) surface‑mount package for compact board-level integration.
• Temperature Range Specified operating temperature of −40 °C to 85 °C (TA), supporting a broad range of thermal environments.
• Memory Type Volatile DRAM technology (SDRAM), intended for temporary data storage and system memory applications.

Typical Applications

• Embedded Systems — Provides 256 Mbit parallel SDRAM for embedded platforms that require a 16M × 16 memory organization and standard SDRAM timing.
• Industrial Control — Fits control systems needing volatile SDRAM with a wide operating temperature range (−40 °C to 85 °C).
• Networking and Communications Equipment — Serves as parallel SDRAM for designs that use 3.0–3.6 V supply rails and a compact TSOP II footprint.
• Consumer and Commercial Electronics — Integrates where mid-density SDRAM in a 54‑pin TSOP II package is required for system memory functions.

Unique Advantages

• Mid-density 256 Mbit capacity: Offers a balance of memory density and board-level footprint for systems requiring 16M × 16 organization.
• Established SDRAM performance: 166 MHz clock and 5.4 ns access time provide predictable timing characteristics for parallel SDRAM designs.
• Wide supply range: 3.0 V to 3.6 V operation aligns with common 3.3 V power domains, simplifying power supply requirements.
• Compact TSOP II package: 54‑pin, 10.16 mm width TSOP II package enables space-efficient mounting on PCBs.
• Extended temperature capability: −40 °C to 85 °C operating range supports a variety of thermal environments without specification changes.
• Manufacturer supply: Produced by Integrated Silicon Solution Inc., providing traceable sourcing for BOM planning.

Why Choose IS42S16160J-6TLI?

The IS42S16160J-6TLI positions itself as a practical SDRAM option where a 256 Mbit, 16M × 16 parallel memory is required in a compact TSOP II package. Its 166 MHz clock rate and 5.4 ns access time deliver the timing characteristics expected from standard SDRAM devices, while the 3.0–3.6 V supply range and −40 °C to 85 °C operating window make it applicable across a range of embedded and industrial designs.

This device is suitable for designers and procurement teams specifying reliable mid-density SDRAM from Integrated Silicon Solution Inc., where package size, voltage compatibility, and standard SDRAM performance are primary selection criteria.

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