 | | IS42S16160L-7BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,206 | |
 | | IS42S16160L-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,410 | |
 | | IS42S16160L-7TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,592 | |
 | | IS42S16160L-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 571 | |
 | | IS42S16160L-7TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 557 | |
 | | IS42S16160L-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 847 | |
 | | IS42S16320B-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,720 | |
 | | IS42S16320B-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 119 | |
 | | IS42S16320B-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 662 | |
 | | IS42S16320B-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54WBGA | Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 760 | |
 | | IS42S16320B-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 349 | |
 | | IS42S16320B-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 217 | |
 | | IS42S16320B-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,260 | |
 | | IS42S16320B-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 681 | |
 | | IS42S16320B-75ETL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 15 | |
 | | IS42S16320B-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,729 | |
 | | IS42S16320B-75ETLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 265 | |
 | | IS42S16320B-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 925 | |
 | | IS42S16320B-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54WBGA | Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 337 | |
 | | IS42S16320B-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54WBGA | Memory | 54-WBGA (11x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,090 | |