 | | IS42S16800D-75ETLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,272 | |
 | | IS42S16800D-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,191 | |
 | | IS42S16800D-7B | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,378 | |
 | | IS42S16800E-6BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 440 | |
 | | IS42S16800E-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,250 | |
 | | IS42S16800E-6BLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,696 | |
 | | IS42S16800E-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 272 | |
 | | IS42S16800E-6TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 41 | |
 | | IS42S16800E-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,125 | |
 | | IS42S16800E-6TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,604 | |
 | | IS42S16800E-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 966 | |
 | | IS42S16800E-75EBL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 951 | |
 | | IS42S16800E-75EBL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 653 | |
 | | IS42S16800E-75EBLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 137 | |
 | | IS42S16800E-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,848 | |
 | | IS42S16800E-75ETL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 658 | |
 | | IS42S16800E-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,338 | |
 | | IS42S16800E-75ETLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 681 | |
 | | IS42S16800E-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 990 | |
 | | IS42S16800E-7BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 790 | |