IS42S16800E-6BLI

The IS42S16800E-6BLI is a 128Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It uses a pipelined, fully synchronous architecture with quad-bank organization and is offered in a 54-ball TF‑BGA (8×8) package for compact system integration.

Designed for high-speed memory applications, this device provides programmable burst operation, selectable CAS latency, and refresh/power-saving modes, delivering predictable timing and thermal range suitable for systems requiring operation from −40°C to 85°C.

Key Features

• Core & Architecture  Fully synchronous SDRAM with pipeline architecture and internal quad-bank design to hide row access/precharge and support continuous data throughput.
• Memory Capacity & Organization  128 Mbit total capacity organized as 8M × 16, providing a compact footprint for moderate-capacity system memory.
• Performance  Device grade supports 166 MHz clock frequency (–6 grade) with typical access time of 5.4 ns (CAS latency = 3).
• Programmable Burst & CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave), with selectable CAS latency of 2 or 3 clocks for flexible timing control.
• Refresh & Power Modes  Supports Auto Refresh (CBR), Self Refresh, and power-down modes with 4096 refresh cycles every 64 ms for data integrity and power management.
• Interface  LVTTL-compatible signaling with a parallel SDRAM interface enabling standard synchronous memory integration.
• Supply Voltage  Designed for 3.3 V VDD and VDDQ operation per the datasheet; operational supply range listed as 3.0 V to 3.6 V in specifications.
• Package & Temperature  54‑TFBGA (8×8) package for compact board space and industrial temperature availability from −40°C to 85°C (TA).

Typical Applications

• Industrial Equipment  Memory subsystems in industrial devices that require operation across −40°C to 85°C and robust refresh/power-saving modes.
• Embedded Systems  On-board parallel SDRAM for embedded controllers and systems needing a 128 Mbit synchronous memory with programmable burst and CAS timing.
• High-Speed Buffering  Use in systems requiring pipelined, synchronous data buffering at up to 166 MHz clock rates and low access latency.

Unique Advantages

• Flexible Timing Configuration: Selectable CAS latency (2 or 3) and programmable burst lengths/sequences allow tuning for system timing and throughput needs.
• Predictable High-Speed Access: 166 MHz operation (–6 grade) with a 5.4 ns access time (CAS = 3) provides deterministic synchronous performance.
• Compact BGA Footprint: 54-ball TF‑BGA (8×8) package reduces PCB area while supporting high-density board designs.
• Industrial Temperature Range: Specified operation from −40°C to 85°C supports deployment in temperature-challenging environments.
• Robust Refresh & Power Options: Auto Refresh, Self Refresh, and power-down modes plus 4096 refresh cycles per 64 ms help maintain data integrity and reduce power draw.
• Standard 3.3 V Compatibility: Device is specified for 3.3 V VDD/VDDQ operation, with a listed supply range of 3.0 V to 3.6 V for design flexibility.

Why Choose IS42S16800E-6BLI?

The IS42S16800E-6BLI provides a balanced combination of synchronous pipeline performance, configurable timing, and industrial temperature capability in a compact 54‑TFBGA package. Its 128 Mbit capacity, LVTTL parallel interface, and support for programmable burst and refresh modes make it suitable for systems that require predictable SDRAM behavior and modest memory density.

This device is appropriate for designers specifying 3.3 V SDRAM with selectable CAS latency and robust refresh options, particularly where board space and thermal range are constraints. Detailed electrical and timing specifications are available in the device datasheet to support system integration and validation.

Request a quote or submit a quotation request for IS42S16800E-6BLI to obtain pricing and lead-time information for your design requirements.